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Method for making backside illuminated image sensor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H02L-021/00
출원번호 US-0372863 (1999-08-12)
발명자 / 주소
  • Malinovich Yacov,ILX
  • Koltin Ephie,ILX
출원인 / 주소
  • Tower Semiconductor Ltd., ILX
대리인 / 주소
    Bever, Hoffman & Harms, LLPBever
인용정보 피인용 횟수 : 195  인용 특허 : 4

초록

A method for producing a back-illuminated CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) that are fabricated on a semiconductor substrate. The semiconductor substrate is secured to a protective substrate by an adhesive such that the processed (frontside) surface of the semicon

대표청구항

[ What is claimed is:] [1.] A method of producing backside illuminated image sensors comprising the steps of:producing a plurality of image sensor circuits on a wafer having first and second surfaces each of the image sensor circuits being formed on the first surface and including a matrix of light-

이 특허에 인용된 특허 (4)

  1. Lebby Michael S. ; Stafford John W. ; Richard Fred V., Integrated electro-optical package.
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  4. Nishizawa, Jun-ichi; Ohmi, Tadahiro, Semiconductor image sensors.

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