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Process to manufacture continuous metal interconnects 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/441
출원번호 US-0163847 (1998-09-30)
발명자 / 주소
  • Hussein Makarem A.
출원인 / 주소
  • Intel Corporation
대리인 / 주소
    Blakely, Sokoloff, Taylor & Zafman LLP
인용정보 피인용 횟수 : 45  인용 특허 : 24

초록

A method of forming an interconnection that includes introducing a barrier material in a via of a dielectric to a circuit device on a substrate in such a manner to deposit the barrier material on the circuit device, introducing a seed material into the via in manner that leaves the barrier material

대표청구항

[ What is claimed is:] [1.] A method of forming an interconnection, comprising:introducing a barrier material in a via of a dielectric to a circuit device on a substrate in such a manner to deposit the barrier material on the circuit device;introducing a seed material into the via in a manner that l

이 특허에 인용된 특허 (24)

  1. Lesh ; deceased Nathan George (LATE OF Bethlehem PA) BY Merchants National Bank of Allentown ; executor (Allentown PA) Morabito Joseph Michael (Bethlehem PA) Thomas ; III John Henry (Pickerington OH), Conduction system for thin film and hybrid integrated circuits.
  2. Dixit Pankaj (Sunnyvale CA) Sliwa Jack (Los Altos Hills CA) Klein Richard K. (Mountain View CA) Sander Craig S. (Mountain View CA) Farnaam Mohammad (Santa Clara CA), Contact plug and interconnect employing a barrier lining and a backfilled conductor material.
  3. Klein Richard K. ; Erb Darrell ; Avanzino Steven ; Cheung Robin ; Luning Scott ; Tracy Bryan ; Gupta Subhash ; Lin Ming-Ren, Copper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor device.
  4. Bai Gang ; Fraser David B., Diffusion barrier for electrical interconnects in an integrated circuit.
  5. Ting Chiu H. (Saratoga CA) Paunovic Milan (Port Washington NY), Electroless deposition for IC fabrication.
  6. August Melvin C. (Chippewa Falls WI) Shepherd Lloyd T. (Eau Claire WI) Kruchowski James N. (Eau Claire WI), High power, high density interconnect method and apparatus for integrated circuits.
  7. Crank Sue E. (Coppell TX), Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer.
  8. Chakravorty Kishore K. (Issaquah WA) Tanielian Minas H. (Bellevue WA), Interconnect structures having tantalum/tantalum oxide layers.
  9. Mikagi Kaoru (Tokyo JPX), Method for fabricating semiconductor device with interconnections buried in trenches.
  10. Liou Fu-Tai (Carrollton TX) Miller Robert O. (The Colony TX) Farohani Mohammed M. (Carrollton TX) Han Yu-Pin (Dallas TX), Method for forming a contact/VIA.
  11. Ho Yu Q. (Kanata CAX) Jolly Gurvinder (Orleans CAX) Emesh Ismail T. (Cumberland CAX), Method for forming interconnect structures for integrated circuits.
  12. Gelatos Avgerinos V. (Austin TX), Method for forming metallization in an integrated circuit.
  13. Chan Lap ; Zheng Jia Zhen,SGX, Method of manufacturing copper interconnect with top barrier layer.
  14. Chang Kenneth (Hopewell Junction NY) Czornyj George (Poughkeepsie NY) Kumar Ananda H. (Hopewell Junction NY) Steimel Heinz O. (Fishkill NY), Multi layer thin film wiring process featuring self-alignment of vias.
  15. Parrillo Louis C. (Austin TX) Klein Jeffrey L. (Austin TX), Process for fabricating a semiconductor device having an improved metal interconnect structure.
  16. Cooper Kent J. (Austin TX) Woo Michael P. (Austin TX) Ray Wayne J. (Austin TX), Process for forming a contact structure.
  17. Huang Hung-Chang W. (San Jose CA) Totta Paul A. (Poughkeepsie NY), Process for improved contact stud structure for semiconductor devices.
  18. Gilton Terry L. (Boise ID) Tuttle Mark E. (Boise ID) Cathey David A (Boise ID), Process for metallizing integrated circuits with electrolytically-deposited copper.
  19. Zhao Bin (Austin TX) Vasudev Prahalad K. (Austin TX) Dubin Valery M. (Cupertino CA) Shacham-Diamand Yosef (Ithaca NY) Ting Chiu H. (Saratoga CA), Selective electroless copper deposited interconnect plugs for ULSI applications.
  20. De Bruin Leendert (Eindhoven NLX) Verhaar Robertus D. J. (Eindhoven NLX) Van Laarhoven Josephus M. F. G. (Eindhoven NLX), Selectively plating conductive pillars in manufacturing a semiconductor device.
  21. Miyata Masahiro (Urayasu JPX) Ezawa Hirokazu (Tokyo JPX) Ogure Naoaki (Tokyo JPX) Tsujimura Manabu (Yokohama JPX) Ohdaira Takeyuki (Fujisawa JPX) Inoue Hiroaki (Machida JPX) Ikeda Yukio (Tokyo JPX), Semiconductor device and method for manufacturing the same.
  22. Gardner Mark I. ; Hause Fred N., Semiconductor fabrication employing copper plug formation within a contact area.
  23. Young Peter L. (South Barrington IL) Cech Jay (Elmhurst IL) Li Kin (Lombard IL), Thin-film electrical connections for integrated circuits.
  24. Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.

이 특허를 인용한 특허 (45)

  1. Chikarmane,Vinay B.; Tsang,Chi Hwa, Apparatus and method of surface treatment for electrolytic and electroless plating of metals in integrated circuit manufacturing.
  2. Cunningham,James A., Copper interconnect systems.
  3. Cunningham,James A., Copper interconnect systems which use conductive, metal-based cap layers.
  4. Cunningham,James A., Copper interconnect systems which use conductive, metal-based cap layers.
  5. Cunningham,James A., Copper interconnect systems which use conductive, metal-based cap layers.
  6. Tetsuo Matsuda JP; Hisashi Kaneko JP, Film formation method.
  7. Farrar, Paul A., Integrated circuit and seed layers.
  8. Farrar,Paul A., Integrated circuit and seed layers.
  9. Farrar,Paul A., Integrated circuit and seed layers.
  10. Lee, Ming Han; Chen, Hai-Ching; Lee, Hsiang-Huan; Bao, Tien-I; Teng, Chi-Lin, Interconnect structure including a continuous conductive body.
  11. Dubin, Valery M.; Thomas, Christopher D.; McGregor, Paul; Datta, Madhav, Interconnect structures and a method of electroless introduction of interconnect structures.
  12. Dubin, Valery M.; Cheng, Chin-Chang; Hussein, Makarem; Nguyen, Phi L.; Brain, Ruth A., Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs.
  13. Ueno, Kazuyoshi, Manufacturing method of a semiconductor device.
  14. Choi, Hyung Bok; Park, Jong Bum; Lee, Kee Jeung; Lee, Jong Min, Method for fabricating capacitor of semiconductor device.
  15. Cyril Cabral, Jr. ; Chao-Kun Hu ; Sandra Guy Malhotra ; Fenton Read McFeely ; Stephen Mark Rossnagel ; Andrew Herbert Simon, Method for forming an open-bottom liner for a conductor in an electronic structure and device formed.
  16. Marathe, Amit P.; Wang, Pin-Chin Connie; Woo, Christy Mei-Chu, Method for forming conductor reservoir volume for integrated circuit interconnects.
  17. Ahn,Kie Y.; Forbes,Leonard, Method for making integrated circuits.
  18. Shih, Tsu; Hung, Kun Ku; Tung, Wen-Hun; Chiou, Wen-Chin, Method for preventing or reducing anodic Cu corrosion during CMP.
  19. Dubin, Valery M.; Thomas, Christopher D.; McGregor, Paul; Datta, Madhav, Method of electroless introduction of interconnect structures.
  20. Preusse, Axel; Friedemann, Michael; Seidel, Robert; Freudenberg, Berit, Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime.
  21. Ahn, Kie Y.; Forbes, Leonard, Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals.
  22. Ahn,Kie Y.; Forbes,Leonard, Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals.
  23. Sinha, Nishant, Methods for forming conductive vias in semiconductor device components.
  24. Sinha, Nishant, Methods for forming conductive vias in semiconductor device components.
  25. Sinha, Nishant, Methods for forming conductive vias in semiconductor device components.
  26. Ahn,Kie Y.; Forbes,Leonard, Methods for making integrated-circuit wiring from copper, silver, gold, and other metals.
  27. Ahn,Kie Y.; Forbes,Leonard, Methods for making integrated-circuit wiring from copper, silver, gold, and other metals.
  28. Ahn,Kie Y.; Forbes,Leonard, Methods for making integrated-circuit wiring from copper, silver, gold, and other metals.
  29. Farnworth, Warren M.; McDonald, Steven M.; Sinha, Nishant; Hiatt, William M., Methods of fabricating substrates including at least one conductive via.
  30. Farnworth,Warren M.; McDonald,Steven M.; Sinha,Nishant; Hiatt,William M., Methods of fabricating substrates including at least one conductive via.
  31. Farnworth, Warren M.; McDonald, Steven M.; Sinha, Nishant; Hiatt, William M., Methods of fabricating substrates including one or more conductive vias.
  32. Cunningham, James A., Methods of manufacturing copper interconnect systems.
  33. Kirby,Kyle K.; Farnworth,Warren M., Methods of plating via interconnects.
  34. Ahn,Kie Y.; Forbes,Leonard; Eldridge,Jerome M., Multilevel copper interconnect with double passivation.
  35. Choi,Hok Kin; Thirumala,Vani; Dubin,Valery; Cheng,Chin chang; Zhong,Ting, Preparation of electroless deposition solutions.
  36. Sinha,Nishant, Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias.
  37. Ahn,Kie Y.; Forbes,Leonard, Selective electroless-plated copper metallization.
  38. Machkaoutsan, Vladimir; Song, Stanley Seungchul; Zhu, John Jianhong; Bao, Junjing; Xu, Jeffrey Junhao; Badaroglu, Mustafa; Nowak, Matthew Michael; Yeap, Choh Fei, Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices.
  39. Sinha, Nishant, Semiconductor device components with conductive vias and systems including the components.
  40. Kirby, Kyle K.; Farnworth, Warren M., Semiconductor devices and in-process semiconductor devices having conductor filled vias.
  41. Farrar, Paul A., Structures and methods to enhance copper metallization.
  42. Farrar, Paul A., Structures and methods to enhance copper metallization.
  43. Farrar,Paul A., Structures and methods to enhance copper metallization.
  44. Farrar,Paul A., Structures and methods to enhance copper metallization.
  45. Dubin,Valery M.; Cheng,Chin Chang; Hussein,Makarem; Nguyen,Phi L.; Brain,Ruth A., Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures.
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