초록 ▼

A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles

A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

대표청구항 ▼

[ What is claimed is:] [1.] A method of fabricating a substrate, said method comprising:providing a donor substrate comprising an upper surface;introducing a plurality of particles through said upper surface and into said donor substrate to a selected depth beneath said upper surface to form a thick

[ What is claimed is:] [1.] A method of fabricating a substrate, said method comprising:providing a donor substrate comprising an upper surface;introducing a plurality of particles through said upper surface and into said donor substrate to a selected depth beneath said upper surface to form a thickness of material of said donor substrate from said upper surface to said selected depth, said plurality of particles being defined by a distribution along said selected depth;introducing energy to said donor substrate to initiate a cleaving action to free said thickness of material from said donor substrate to form a cleaved surface from said donor substrate, said cleaved surface comprising a surface roughness of a predetermined value and comprising a portion of said distribution of said plurality of particles; andapplying a combination of thermal treatment and an etchant to said cleaved surface after forming said cleaved surface and said portion of said distribution of said plurality of particles to reduce said surface roughness of said predetermined value, wherein said etchant comprises a halogen bearing compound selected from at least any one of Cl.sub.2, HCl, HBr, HI, and HF.