초록 ▼

A method for forming micromachined devices out of a polycrystalline silicon substrate using deep reactive ion etching to form the micromachined device. The method comprises the steps of providing a bulk material substrate of polycrystalline silicon, and etching the bulk material using deep reactive

A method for forming micromachined devices out of a polycrystalline silicon substrate using deep reactive ion etching to form the micromachined device. The method comprises the steps of providing a bulk material substrate of polycrystalline silicon, and etching the bulk material using deep reactive ion etching to form the micromachined device. The present invention also includes a method for forming a micromachined device comprising the steps of providing a first layer of single crystal silicon and etching a first set of elements on the first layer. The method further includes the steps of providing a second layer of single crystal silicon, etching a second set of elements on the second layer, and joining the first and second layers together such that the crystal planes of the first layer and the second layer are misaligned and such that the first set and the second set of elements are properly aligned.

대표청구항

[ What is claimed is:] [1.] A method for forming a micromachined device comprising the steps of:providing a bulk substrate of polycrystalline silicon; andbulk etching said bulk substrate to form the micromachined device.

[ What is claimed is:] [1.] A method for forming a micromachined device comprising the steps of:providing a bulk substrate of polycrystalline silicon; andbulk etching said bulk substrate to form the micromachined device.