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Method and apparatus for electro-chemical mechanical deposition 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-005/00
  • B23H-003/00
출원번호 US-0201929 (1998-12-01)
발명자 / 주소
  • Talieh Homayoun
출원인 / 주소
  • Nutool, Inc.
대리인 / 주소
    Pillsbury Madison & Sutro, LLP
인용정보 피인용 횟수 : 307  인용 특허 : 13

초록 ▼

The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surfa

대표청구항 ▼

[ I claim:] [1.] A method of depositing a conductive material from an electrolyte solution of a workpiece having a top surface and a cavity portion disposed on the top surface and having a conductive layer disposed on the top surface and the cavity portion of the workpiece comprising the steps of:ap

이 특허에 인용된 특허 (13)

  1. Brusic Vlasta A. ; Marino Jeffrey Robert ; O'Sullivan Eugene John ; Sambucetti Carlos Juan ; Schrott Alejandro Gabriel ; Uzoh Cyprian Emeka, Cobalt-tin alloys and their applications for devices, chip interconnections and packaging.
    상세보기
  2. Uzoh Cyprian E., Continuous highly conductive metal wiring structures and method for fabricating the same.
    상세보기
  3. Palnik Karl (Huntingdon Valley PA), Electrolytic plating apparatus.
    상세보기
  4. Dubin Valery, Electroplating apparatus.
    상세보기
  5. Ichinose Hirofumi,JPX ; Sawayama Ippei,JPX ; Hasebe Akio,JPX ; Murakami Tsutomu,JPX ; Hisamatsu Masaya,JPX ; Shinkura Satoshi,JPX ; Ueno Yukie,JPX, Etching method and process for producing a semiconductor element using said etching method.
    상세보기
  6. Talieh Homayoun (Santa Clara County CA) Weldon David Edwin (Santa Cruz County CA), Linear polisher and method for semiconductor wafer planarization.
    상세보기
  7. Talieh Homoyoun (Sunnyvale CA) Tepman Avi (Cupertino CA) Kieu Hoa Thi (Sunnyvale CA) Wang Chien-Rhone (Milpitas CA), Material deposition method for integrated circuit manufacturing.
    상세보기
  8. Kadija Igor V. (118 Sherwood Rd. Ridgewood NJ 07450), Method and apparatus for manufacturing interconnects with fine lines and spacing.
    상세보기
  9. Uzoh Cyprian Emeka ; Harper James McKell Edwin, Method of electrochemical mechanical planarization.
    상세보기
  10. Liu Yauh-Ching ; Perng Dung-Ching, Method of single step damascene process for deposition and global planarization.
    상세보기
  11. Simon Andrew H. ; Uzoh Cyprian E., Open-bottomed via liner structure and method for fabricating same.
    상세보기
  12. Ishida Hirofumi (Kanagawa JPX), Plating device for wafer.
    상세보기
  13. Talieh Homayoun (San Jose CA) Weldon David E. (Los Gatos CA) Nagorski Boguslaw A. (San Jose CA), Wafer polishing machine with fluid bearings.
    상세보기

이 특허를 인용한 특허 (307)

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  125. Paul Lindquist ; Bulent Basol ; Cyprian Uzoh ; Homayoun Talieh, Method and apparatus employing pad designs and structures with improved fluid distribution.
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  126. Sabde, Gundu M.; Hofmann, James J.; Joslyn, Michael J.; Lee, Whonchee, Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids.
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  127. Lee,Whonchee; Meikle,Scott G., Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates.
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  128. Chopra, Dinesh; Meikle, Scott G., Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates.
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  129. Chopra, Dinesh; Meikle, Scott G., Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates.
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  130. Cyprian Emeka Uzoh ; Homayoun Talieh, Method and apparatus for depositing and controlling the texture of a thin film.
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  131. Uzoh, Cyprian Emeka; Talieh, Homayoun, Method and apparatus for depositing and controlling the texture of a thin film.
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  132. Hsu, Wei-Yung; Chen, Liang-Yuh; Morad, Ratson; Carl, Daniel A.; Somekh, Sasson, Method and apparatus for electro-chemical processing.
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  133. Wang, Yan; Neo, Siew; Liu, Feng; Tsai, Stan D.; Hu, Yongqi; Duboust, Alain; Manens, Antoine; Wadensweiler, Ralph M.; Mavliev, Rashid; Chen, Liang-Yuh; Olgado, Donald J. K.; Butterfield, Paul D.; Tseng, Ming-Kuei; Chang, Shou-Sung; Sun, Lizhong, Method and apparatus for electrochemical mechanical processing.
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  134. Emesh, Ismail; Chadda, Saket; Korovin, Nikolay N.; Mueller, Brian L., Method and apparatus for electrochemical planarization of a workpiece.
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  135. Emesh, Ismail; Chadda, Saket; Korovin, Nikolay N.; Mueller, Brian L., Method and apparatus for electrochemical planarization of a workpiece.
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  136. Emesh, Ismail; Chadda, Saket; Korovin, Nikolay N; Mueller, Brian L, Method and apparatus for electrochemical planarization of a workpiece.
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  137. Saket Chadda ; Chris Barns, Method and apparatus for electrochemical planarization of a workpiece.
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  138. Lizhong Sun ; Stan D. Tsai ; Fred C. Redeker, Method and apparatus for electrochemical-mechanical planarization.
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  139. Sun, Lizhong; Tsai, Stan D.; Redeker, Fred C., Method and apparatus for electrochemical-mechanical planarization.
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  140. Emesh, Ismail; Chadda, Saket; Korovin, Nikolay; Mueller, Brian, Method and apparatus for electrochemically depositing a material onto a workpiece surface.
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  141. Basol, Bulent M.; Uzoh, Cyprian; Talieh, Homayoun, Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate.
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  142. Wang,You; Diao,Jie; Tsai,Stan D.; Karuppiah,Lakshmanan, Method and apparatus for electroprocessing a substrate with edge profile control.
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  143. Kholodenko, Arnold, Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process.
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  144. Tsai, Stan D.; Wang, Yuchun; Wijekoon, Kapila; Bajaj, Rajeev; Redeker, Fred C., Method and apparatus for enhanced CMP using metals having reductive properties.
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  146. Duboust, Alain; Chang, Shou-Sung; Chen, Liang-Yuh; Wang, Yan; Neo, Siew; Sun, Lizhong; Liu, Feng Q., Method and apparatus for face-up substrate polishing.
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  147. Talieh,Homayoun; Basol,Bulent, Method and apparatus for forming an electrical contact with a semiconductor substrate.
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  148. Tsai, Stan; Li, Shijian, Method and apparatus for forming metal layers.
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  150. Basol,Bulent M., Method and apparatus for localized material removal by electrochemical polishing.
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  151. Basol, Bulent M.; Uzoh, Cyprian; Talieh, Homayoun, Method and apparatus for processing a substrate with minimal edge exclusion.
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  152. Lee,Whonchee; Meikle,Scott G.; Blalock,Guy, Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate.
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  153. Kistler, Rodney C.; Carswell, Andrew, Method and apparatus for removing material from microfeature workpieces.
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  156. Chopra, Dinesh, Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates.
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  157. Emesh, Ismail; Gopalan, Periya; Rayer, II, Phillip M.; Palmer, Bentley J., Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface.
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  158. Chadda,Saket, Method and apparatus for the electrochemical deposition and removal of a material on a workpiece surface.
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  159. Mayer, Steven T.; Drewery, John S., Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation.
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  160. Mayer, Steven T.; Contolini, Robert J.; Broadbent, Eliot K.; Drewery, John S., Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation.
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  161. Vasilev, Vladislav, Method and apparatus for workpiece surface modification for selective material deposition.
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  164. Liu,Feng Q.; Du,Tianbao; Duboust,Alain; Hsu,Wei Yung, Method and composition for electrochemical mechanical polishing processing.
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  165. Jia,Renhe; Liu,Feng Q.; Tsai,Stan D.; Chen,Liang Yuh, Method and composition for polishing a substrate.
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  167. Liu,Feng Q.; Du,Tianbao; Duboust,Alain; Wang,Yan; Hu,Yongqi; Tsai,Stan D.; Chen,Liang Yuh; Tu,Wen Chiang; Hsu,Wei Yung, Method and composition for polishing a substrate.
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  168. Liu,Feng Q.; Tsai,Stan D.; Hu,Yongqi; Neo,Siew S.; Wang,Yan; Duboust,Alain; Chen,Liang Yuh, Method and composition for polishing a substrate.
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  169. Liu,Feng Q.; Tsai,Stan D.; Hu,Yongqi; Neo,Siew S.; Wang,Yan; Duboust,Alain; Chen,Liang Yuh, Method and composition for polishing a substrate.
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  170. Basol,Bulent M; Talieh,Homayoun, Method and system for electroprocessing conductive layers.
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  171. White, David, Method and system for handling process related variations for integrated circuits based upon reflections.
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  172. Uzoh,Cyprian E.; Talieh,Homayoun; Basol,Bulent M.; Yakupoglu,Halit N., Method and system for optically enhanced metal planarization.
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  173. Basol, Bulent M.; Uzoh, Cyprian E., Method and system monitoring and controlling film thickness profile during plating and electroetching.
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  174. Basol, Bulent M., Method for controlling conductor deposition on predetermined portions of a wafer.
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  175. Basol,Bulent M.; Lindquist,Paul, Method for controlling thickness uniformity of electroplated layers.
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  176. Reid, Jonathan David, Method for electrochemical planarization of metal surfaces.
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  177. Basol, Bulent M.; Talieh, Homayoun; Uzoh, Cyprian E., Method for electrochemically processing a workpiece.
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  178. Basol,Bulent M.; Talieh,Homayoun; Uzoh,Cyprian E., Method for electrochemically processing a workpiece.
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  179. Lee, Whonchee; Meikle, Scott G.; Blalock, Guy T., Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture.
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  180. Mayer,Steven T.; Reid,Jonathan D.; Rea,Mark L.; Emesh,Ismail T.; Meinhold,Henner W.; Drewery,John S., Method for planar electroplating.
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  181. Taylor,Theodore M., Method for planarizing microelectronic workpieces.
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  182. Lee, Whonchee; Meikle, Scott G.; Blalock, Guy T., Method for removing metal layers formed outside an aperture of a BPSG layer utilizing multiple etching processes including electrochemical-mechanical polishing.
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  183. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Method for selectively removing conductive material from a microelectronic substrate.
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  184. Chopra,Dinesh, Method for simultaneously removing multiple conductive materials from microelectronic substrates.
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  185. Jalal Ashjaee ; Boguslaw A. Nagorski ; Bulent M. Basol ; Homayoun Talieh ; Cyprian Uzoh, Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing.
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  186. Wu,Tom; Somekh,Sasson; Chiang,Chien, Method of forming a damascene structure with integrated planar dielectric layers.
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  187. Wu,Tom; Somekh,Sasson; Chiang,Chien, Method of forming a damascene structure with integrated planar dielectric layers.
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  188. Kim,Si Bum, Method of forming copper wiring in a semiconductor device.
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  189. Talieh,Homayoun; Uzoh,Cyprian; Basol,Bulent M., Method of making rolling electrical contact to wafer front surface.
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  190. Matsuda,Tetsuo; Kaneko,Hisashi, Method of manufacturing electronic device.
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  191. Kunisawa,Junji; Odagaki,Mitsuko; Makino,Natsuki; Mishima,Koji; Nakamura,Kenji; Inoue,Hiroaki; Kimura,Norio; Matsuda,Tetsuo; Kaneko,Hisashi; Hayasaka,Nobuo; Okumura,Katsuya; Tsujimura,Manabu; Morita,Toshiyuki, Method of performing electrolytic treatment on a conductive layer of a substrate.
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  192. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
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  193. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
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  194. Lee, Whonchee; Meikle, Scott G.; Moore, Scott E.; Doan, Trung T., Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate.
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  195. Lee,Whonchee; Meikle,Scott G.; Moore,Scott E.; Doan,Trung T., Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate.
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  196. Lee,Whonchee; Meikle,Scott G.; Moore,Scott E., Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate.
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  197. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium.
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  198. Lee,Whonchee; Moore,Scott E.; Meikle,Scott G., Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium.
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  199. Moore,Scott E.; Lee,Whonchee; Meikle,Scott G.; Doan,Trung T., Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces.
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  200. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
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  201. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
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  202. Lee,Whonchee; Moore,Scott E.; Meikle,Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
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  203. Lee, Whonchee; Moore, Scott E.; Vaartstra, Brian A., Methods and apparatus for removing conductive material from a microelectronic substrate.
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  206. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for selectively removing conductive material from a microelectronic substrate.
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  208. Lee, Whonchee, Methods and apparatuses for electrochemical-mechanical polishing.
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  211. Lu, Jin, Methods and apparatuses for removing polysilicon from semiconductor workpieces.
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  221. Moore,Carter; Folkes,Elon; Castor,Terry, Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.
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  224. Cohen, Uri, Methods for activating openings for jets electroplating.
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  234. Mayer, Steven T.; Porter, David W., Modulated metal removal using localized wet etching.
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  245. Martin, Michael H.; Crump, Brett, Planarity diagnostic system, E.G., for microelectronic component test systems.
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  254. Nagai, Mizuki; Kanda, Hiroyuki; Kurashina, Keiichi; Yamamoto, Satoru; Kimizuka, Ryoichi; Deligianni, Hariklia; Baker, Brett; Kwietniak, Keith; Andricacos, Panayotis; Vereecken, Phillipe, Plating apparatus and plating method.
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