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Process for preparing bulk cubic gallium nitride 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C01B-021/06
출원번호 US-0252592 (1999-02-09)
발명자 / 주소
  • Purdy Andrew P.
출원인 / 주소
  • The United States of America as represented by the Secretary of the Navy
대리인 / 주소
    Karasek
인용정보 피인용 횟수 : 70  인용 특허 : 2

초록 ▼

Bulk cubic gallium nitride is made by charging into a reaction vessel to a fill of 25-95% having a temperature difference between its ends of at least 1.degree. C. a gallium precursor, sufficient amount of an acid mineralizer to form product zinc blende gallium nitride, and sufficient amount of ammo

대표청구항 ▼

[ What I claim is:] [1.] A process for preparing cubic GaN comprising the steps of(a) charging into a reaction vessel to a fill factor of 25-95% and having a temperature difference between its ends of at least 1.degree. C. a gallium precursor, an acid mineralizer to form product cubic gallium nitrid

이 특허에 인용된 특허 (2)

  1. Pankove Jacques I. (Boulder CO), High temperature semiconductor devices having at least one gallium nitride layer.
    상세보기
  2. Shealy James R. ; Engstrom James R. ; Lo Yu-Hwa, Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF plasma process.
    상세보기

이 특허를 인용한 특허 (70)

  1. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek P.; Kanbara,Yasuo, Apparatus for obtaining a bulk single crystal using supercritical ammonia.
    상세보기
  2. D'Evelyn, Mark Philip; Giddings, Robert Arthur; Sharifi, Fred; Dey, Subhrajit; Hong, Huicong; Kapp, Joseph Alexander; Khare, Ashok Kumar, Apparatus for processing materials in supercritical fluids and methods thereof.
    상세보기
  3. D'Evelyn,Mark Philip; Park,Dong Sil; Lou,Victor Lienkong; McNulty,Thomas Francis; Hong,Huicong, Apparatus for producing single crystal and quasi-single crystal, and associated method.
    상세보기
  4. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo; Kucharski, Robert, Bulk mono-crystalline gallium-containing nitride and its application.
    상세보기
  5. Dwilinski, Robert Tomasz; Doradzinski, Roman Marek; Garczynski, Jerzy; Sierzputowski, Leszek Piotr; Kanbara, Yasuo, Bulk monocrystalline gallium nitride.
    상세보기
  6. Dwiliński, Robert Tomasz; Doradziński, Roman Marek; Garczyński, Jerzy; Sierzputowski, Leszek Piotr; Kanbara, Yasuo, Bulk monocrystalline gallium nitride.
    상세보기
  7. Dwiliński,Robert; Doradziński,Roman; Garczyński,Jerzy; Sierzputowski,Leszek P.; Kanbara,Yasuo, Bulk nitride mono-crystal including substrate for epitaxy.
    상세보기
  8. Dwiliński,Robert; Doradziński,Roman; Garczynski,Jerzy; Sierzputowski,Leszek P.; Kanbara,Yasuo, Bulk nitride mono-crystal including substrate for epitaxy.
    상세보기
  9. Park, Dong-Sil; D'Evelyn, Mark Philip; Peterson, II, Myles Standish; Leman, John Thomas; Sharifi, Fred, Crystalline composition, device, and associated method.
    상세보기
  10. Van Patten,Paul Gregory; Pan,Guiquan, Direct pyrolysis route to GaN quantum dots.
    상세보기
  11. Craven, Michael D.; Denbaars, Steven P.; Speck, James S.; Nakamura, Shuji, Dislocation reduction in non-polar III-nitride thin films.
    상세보기
  12. Jeon, Woo-chul; Park, Ki-yeol; Park, Young-hwan; Shin, Jai-kwang; Oh, Jae-joon, Electronic device including transistor and method of operating the same.
    상세보기
  13. Chakraborty, Arpan; Haskell, Benjamin A.; Keller, Stacia; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji; Mishra, Umesh K., Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition.
    상세보기
  14. Chakraborty,Arpan; Haskell,Benjamin A.; Keller,Stacia; Speck,James S.; DenBaars,Steven P.; Nakamura,Shuji; Mishra,Umesh K., Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition.
    상세보기
  15. Chakraborty,Arpan; Haskell,Benjamin A.; Keller,Stacia; Speck,James Stephen; Denbaars,Steven P.; Nakamura,Shuji; Mishra,Umesh Kumar, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition.
    상세보기
  16. Chakraborty, Arpan; Haskell, Benjamin A.; Keller, Stacia; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji; Mishra, Umesh K., Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition.
    상세보기
  17. Hashimoto, Tadao; Nakamura, Shuji, Gallium nitride bulk crystals and their growth method.
    상세보기
  18. Hashimoto, Tadao; Nakamura, Shuji, Gallium nitride bulk crystals and their growth method.
    상세보기
  19. Spencer, Michael G.; DiSalvo, Francis J.; Wu, Huaqiang, Group III nitride compositions.
    상세보기
  20. Haskell,Benjamin A.; McLaurin,Melvin B.; DenBaars,Steven P.; Speck,James Stephen; Nakamura,Shuji, Growth of planar reduced dislocation density-plane gallium nitride by hydride vapor phase epitaxy.
    상세보기
  21. Haskell,Benjamin A.; Fini,Paul T.; Matsuda,Shigemasa; Craven,Michael D.; DenBaars,Steven P.; Speck,James S.; Nakamura,Shuji, Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy.
    상세보기
  22. Haskell, Benjamin A.; Fini, Paul T.; Matsuda, Shigemasa; Craven, Michael D.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji, Growth of planar, non-polar, group-III nitride films.
    상세보기
  23. Haskell, Benjamin A.; Craven, Michael D.; Fini, Paul T.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji, Growth of reduced dislocation density non-polar gallium nitride.
    상세보기
  24. Haskell,Benjamin A; Craven,Michael D.; Fini,Paul T.; DenBaars,Steven P.; Speck,James S.; Nakamura,Shuji, Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy.
    상세보기
  25. Hashimoto, Tadao; Letts, Edward, Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride.
    상세보기
  26. Hashimoto, Tadao; Letts, Edward, Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride.
    상세보기
  27. D'Evelyn,Mark Philip; Webb,Steven William; Vagarali,Suresh Shankarappa; Kadioglu,Yavuz; Park,Dong Sil; Chen,Zheng, High pressure high temperature growth of crystalline group III metal nitrides.
    상세보기
  28. D'Evelyn, Mark Philip; Narang, Kristi Jean; Giddings, Robert Arthur; Tysoe, Steven Alfred; Lucek, John William; Vagarali, Suresh Shankarappa; Leonelli, Jr., Robert Vincent; Dysart, Joel Rice, High temperature high pressure capsule for processing materials in supercritical fluids.
    상세보기
  29. D'Evelyn,Mark Philip; Narang,Kristi Jean; Giddings,Robert Arthur; Tysoe,Steven Alfred; Lucek,John William; Vagarali,Suresh Shankarappa; Leonelli, Jr.,Robert Vincent; Dysart,Joel Rice, High temperature high pressure capsule for processing materials in supercritical fluids.
    상세보기
  30. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori, High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal.
    상세보기
  31. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori, High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal.
    상세보기
  32. Beach,Robert A.; Strittmatter,Robert P.; McGill,Thomas C., Integrated micropump analysis chip and method of making the same.
    상세보기
  33. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Light emitting element structure using nitride bulk single crystal layer.
    상세보기
  34. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek; Kanbara,Yasuo, Method and equipment for manufacturing aluminum nitride bulk single crystal.
    상세보기
  35. Keller, Stacia; Mishra, Umesh Kumar; Fichtenbaum, Nicholas A., Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition.
    상세보기
  36. Keller, Stacia; Mishra, Umesh K.; Fichtenbaum, Nicholas K., Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition.
    상세보기
  37. Keller, Stacia; Mishra, Umesh K.; Fichtenbaum, Nicholas A., Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition.
    상세보기
  38. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori, Method for producing group III-nitride wafers and group III-nitride wafers.
    상세보기
  39. Hara, Kazuhiko, Method for producing powders made of gallium nitride and apparatus for producing the same.
    상세보기
  40. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward, Method for testing group III-nitride wafers and group III-nitride wafers with test data.
    상세보기
  41. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward, Method for testing group III-nitride wafers and group III-nitride wafers with test data.
    상세보기
  42. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward, Method for testing group III-nitride wafers and group III-nitride wafers with test data.
    상세보기
  43. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek; Kanbara,Yasuo, Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate.
    상세보기
  44. Spencer,Michael G.; DiSalvo,Francis J.; Wu,Huaqiang, Method of making Group III nitrides.
    상세보기
  45. Bridger, Paul M.; Strittmatter, Robert P.; Beach, Robert A.; McGill, Thomas C., Method of manufacture of a suspended nitride membrane and a microperistaltic pump using the same.
    상세보기
  46. Sasagawa, Yuji; Wakao, Osamu; Yamamura, Yoshihiko; Akatsuka, Shigeharu; Matsushita, Keiichiro, Method of manufacturing a pressure vessel for growing single crystals.
    상세보기
  47. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek; Kanbara,Yasuo, Method of manufacturing bulk single crystal of gallium nitride.
    상세보기
  48. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Method of preparing light emitting device.
    상세보기
  49. Ichimura, Mikiya; Imai, Katsuhiro, Method of recovering sodium metal from flux.
    상세보기
  50. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori, Methods for producing GaN nutrient for ammonothermal growth.
    상세보기
  51. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori, Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth.
    상세보기
  52. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori, Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth.
    상세보기
  53. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek; Kanbara,Yasuo, Nitride semiconductor laser device and manufacturing method thereof.
    상세보기
  54. Craven, Michael D.; DenBaars, Steven P., Non-polar (Al,B,In,Ga)N quantum wells.
    상세보기
  55. Craven, Michael D.; Speck, James Stephen, Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition.
    상세보기
  56. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same.
    상세보기
  57. Callahan, Michael J.; Wang, Buguo; Bailey, John S., Polycrystalline III-nitrides.
    상세보기
  58. Sasagawa, Yuji; Wakao, Osamu; Yamamura, Yoshihiko; Akatsuka, Shigeharu; Matsushita, Keiichiro, Pressure vessel for growing single crystals.
    상세보기
  59. Dwiliński,Robert Tomasz; Doradziński,Roman Marek; Garczyński,Jerzy; Sierzputowski,Leszek Piotr; Kanbara,Yasuo, Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride.
    상세보기
  60. Dwilinski,Robert Tomasz; Doradzinski,Roman Marek; Sierzfutowski,Leszek Piotr; Garczynski,Jerzy; Kanbara,Yasuo, Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride.
    상세보기
  61. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Process for obtaining bulk mono-crystalline gallium-containing nitride.
    상세보기
  62. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek P.; Kanbara,Yasuo, Process for obtaining of bulk monocrystalline gallium-containing nitride.
    상세보기
  63. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Iwata, Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate.
    상세보기
  64. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Iwata, Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate.
    상세보기
  65. Sarayama,Seiji; Shimada,Masahiko; Yamane,Hisanori; Iwata,Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate.
    상세보기
  66. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Iwata, Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed thereon.
    상세보기
  67. Sarayama,Seiji; Shimada,Masahiko; Yamane,Hisanori; Iwata,Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed thereon.
    상세보기
  68. D'Evelyn, Mark P.; Pender, David C.; Vagarali, Suresh S.; Park, Dong-Sil, Sintered polycrystalline gallium nitride and its production.
    상세보기
  69. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Substrate for epitaxy and method of preparing the same.
    상세보기
  70. Fujikura, Hajime, Zinc-blende nitride semiconductor free-standing substrate, method for fabricating same, and light-emitting device employing same.
    상세보기

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