초록 ▼

An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a

An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device.

대표청구항 ▼

[ What we claim is:] [1.] An electron field emission device, comprising:a carbon-based body having two layers, the first layer having a thickness greater than about 0.5 micrometer and a second layer having a thickness greater than the thickness of the first layer, the layers being formed by placing

[ What we claim is:] [1.] An electron field emission device, comprising:a carbon-based body having two layers, the first layer having a thickness greater than about 0.5 micrometer and a second layer having a thickness greater than the thickness of the first layer, the layers being formed by placing a substrate in a reactor at a selected pressure and bringing the substrate to a selected range of temperature and supplying a mixture of gases comprising a carbon-containing gas at a first concentration and hydrogen to the reactor while supplying energy to the mixture of gases near the substrate for a time sufficient to grow the first layer and then reducing the concentration of the carbon-containing gas to second lower concentration and growing the second layer and subsequently removing the substrate from the first layer; andan electrical contact on the second layer.