초록 ▼

An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the same integrated circuit. For this optical-elec

An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the same integrated circuit. For this optical-electronic integrated circuit, the photo detection circuit is made by a process--a current is generated when the photo detection circuit is impinged by photons.

대표청구항 ▼

[ What is claimed is:] [1.] A method of fabricating an optical-electronic integrated circuit for generating a current responsive to a light signal incident thereon comprising the steps of:(a) establishing on a substrate a semiconductor transistor device;(b) forming adjacent said semiconductor transi

[ What is claimed is:] [1.] A method of fabricating an optical-electronic integrated circuit for generating a current responsive to a light signal incident thereon comprising the steps of:(a) establishing on a substrate a semiconductor transistor device;(b) forming adjacent said semiconductor transistor device a first metal layer by depositing a material substantially transparent to the incident light signal;(c) forming a photo detection semiconductor film by depositing on said first metal layer a material containing a component selected from the group consisting of: amorphous silicon, amorphous germanium, silicon germanium, silicon carbide, gallium arsenide, indium phosphide, and gallium aluminum arsenide;(d) forming a second metal layer upon said photo detection semiconductor film by metallization, wherein at least one of said first and second metal layers defines an undulating pattern; and,(e) coupling at least one of said first and second metal layers to said semiconductor transistor device, whereby said photo detection semiconductor film is depleted responsive to the application of a predetermined potential across said first and second metal layers.