초록 ▼

A process for forming a novel substrate material. The process includes providing a substrate, e.g., silicon wafer. The substrate has a stressed layer at a selected depth underneath a surface of the substrate. The stressed layer is at the selected depth to define a substrate material to be removed ab

A process for forming a novel substrate material. The process includes providing a substrate, e.g., silicon wafer. The substrate has a stressed layer at a selected depth underneath a surface of the substrate. The stressed layer is at the selected depth to define a substrate material to be removed above the selected depth. The stressed layer comprises a deposited layer and an implanted region. The substrate also comprises a device layer overlying the stressed layer. The process includes forming a plurality of integrated circuit devices on the substrate material. A thermal treatment process at a temperature greater than about 400 degrees Celsius is included in the process of forming the integrated circuit devices. Next, the process includes providing energy to a selected region of the substrate to initiate a controlled cleaving action at the selected depth in the substrate, whereupon the cleaving action is made using a propagating cleave front to free a portion of the material to be removed from the substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A process for forming electronic devices, the process comprising steps:providing a substrate, the substrate comprising a stressed layer at a selected depth underneath a surface of the substrate, the stressed layer being at the selected depth to define a substrate material

[ What is claimed is:] [1.] A process for forming electronic devices, the process comprising steps:providing a substrate, the substrate comprising a stressed layer at a selected depth underneath a surface of the substrate, the stressed layer being at the selected depth to define a substrate material to be removed above the selected depth, the stressed layer comprising a deposited layer and an implanted region, the substrate material comprising a device layer;forming a plurality of integrated circuit devices on the substrate material, the forming comprising a thermal treatment process at a temperature greater than about 400 degrees Celsius, while maintaining a substantially microbubble free implanted region in the stressed layer;providing energy to a selected region of the substrate to initiate a controlled cleaving action at the selected depth in the substrate, whereupon the cleaving action is made using a propagating cleave front to free a portion of the material to be removed from the substrate.