초록 ▼

A new method is provided to construct a copper dual damascene structure. A layer of IMD is deposited over the surface of a substrate. A cap layer is deposited over this layer of IMD, the dual damascene structure is then patterned through the cap layer and into the layer of IMD. A barrier layer is bl

A new method is provided to construct a copper dual damascene structure. A layer of IMD is deposited over the surface of a substrate. A cap layer is deposited over this layer of IMD, the dual damascene structure is then patterned through the cap layer and into the layer of IMD. A barrier layer is blanket deposited, a copper seed layer is deposited over the barrier layer. The dual damascene structure is then filled with a spin-on material. The barrier layer and the copper seed layer are removed above the cap layer; the cap layer can be partially removed or can be left in place. The spin on material remains in place in the via and trench opening during the operation of removing the copper seed layer and the barrier layer from above the cap surface thereby protecting the inside surfaces of these openings. The spin-on material is next removed from the dual damascene structure and copper is deposited. The cap layer that is still present above the surface of the IMD protects the dielectric from being contaminated with copper solution during the deposition of the copper. The excess copper is removed using a touch-up CMP. The cap layer over the surface of the IMD can, after the copper has been deposited, be removed if this is so desired. As a final step in the process, a liner or oxidation/diffusion protection layer is deposited over the dual damascene structure and its surrounding area.

대표청구항 ▼

[ What is claimed is:] [1.] A method of creating a copper dual damascene structure on the surface of a semiconductor substrate, comprising the steps of:providing a semiconductor substrate the surface of said substrate to contain metal contact points;forming an opening for a dual damascene structure

[ What is claimed is:] [1.] A method of creating a copper dual damascene structure on the surface of a semiconductor substrate, comprising the steps of:providing a semiconductor substrate the surface of said substrate to contain metal contact points;forming an opening for a dual damascene structure on the surface of said substrate said opening to be formed in a layer of Inter Metal Dielectric (IMD) over which a cap layer has been deposited;depositing a diffusion barrier layer inside said opening and over the surface of its surrounding area;depositing a copper seed layer over said diffusion barrier layer;depositing a spin-on layer over said copper seed layer;removing said spin-on material from above said opening and from above the surface of said surrounding area thereby leaving in place said spin-on material inside the opening of said dual damascene structure;removing said copper seed layer from above the surface of said surrounding area;removing said barrier layer from above the surface of said surrounding area;removing said spin-on material from said opening of said dual damascene structure;selectively electroless depositing a layer of copper over said dual damascene opening;removing excess copper from above the dual damascene opening by a touch-up CMP; anddepositing an oxidation/diffusion protection layer over the surface of said dual damascene structure and its surrounding area.