초록 ▼

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high c

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A multilayered substrate comprising:a substrate, said substrate comprising a plurality of devices defined thereon, said substrate also comprising a dielectric layer formed overlying said devices and a surface that is substantially planar overlying said dielectric layer;a

[ What is claimed is:] [1.] A multilayered substrate comprising:a substrate, said substrate comprising a plurality of devices defined thereon, said substrate also comprising a dielectric layer formed overlying said devices and a surface that is substantially planar overlying said dielectric layer;a plurality of particles defined in said substrate at a selected depth underneath said surface and said devices, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth;a target substrate joined to said surface of said substrate; andenergy applied to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.