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특허 상세정보

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Gas treatment apparatus

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C23K-016/00   
미국특허분류(USC) 118/715
출원번호 US-0210854 (1998-12-15)
우선권정보 JP0078395 (1998-03-11)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 49  인용 특허 : 8
초록
▼

A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surfac...

대표
청구항
▼

[ What is claimed is:] [1.] A gas treatment apparatus, comprising:a sealing vessel for treating a substrate with gas;a substrate holding portion, disposed in said sealing vessel, for holding the substrate;a gas flow regulating surface portion, disposed opposite to a treatment surface of the substrate held on said substrate holding portion, said gas flow regulating surface portion protruding to said substrate holding portion and having at least an outer peripheral portion for forming a narrowed gas path with said substrate holding portion;a gas supplying ...

이 특허에 인용된 특허 (8)

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  2. Derbenwick Gary F. ; McMillan Larry D. ; Solayappan Narayan ; Scott Michael C. ; Paz de Araujo Carlos A. ; Hayashi Shinichiro. Liquid source formation of thin films using hexamethyl-disilazane. USP1998125846597.
  3. Gnade Bruce E. (Dallas TX) Cho Chih-Chen (Richardson TX) Smith Douglas M. (Albuquerque NM). Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics a. USP1996025494858.
  4. Gnade Bruce E. (Dallas TX) Cho Chih-Chen (Richardson TX) Smith Douglas M. (Albuquerque NM). Method of making a semiconductor device using a low dielectric constant material. USP1995115470802.
  5. McMillan Larry D. (Colorado Springs CO) Paz de Araujo Carlos A. (Colorado Springs CO) Roberts Tommy L. (Colorado Springs CO). Misted deposition apparatus for fabricating an integrated circuit. USP1996075540772.
  6. McMillan Larry D. (Colorado Springs CO) Paz de Araujo Carlos A. (Colorado Springs CO) Scott Michael C. (Colorado Springs CO). Misted deposition method of fabricating layered superlattice materials. USP1997115688565.
  7. Maruyama Yumiko,JPX ; Ikeda Takahiro,JPX. Pattern lithography method. USP1998115830623.
  8. Strodtbeck Timothy A. ; Molebash John S. ; Hayes Bruce L. ; Smith Rex A. ; Davis Shawn D.. Thermal conditioning apparatus. USP2000076090209.

이 특허를 인용한 특허 피인용횟수: 49

  1. Gealy, Dan; Weimer, Ronald A.. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers. USP2009097584942.
  2. Carpenter,Craig M.; Mardian,Allen P.; Dando,Ross S.; Tschepen,Kimberly R.; Derderian,Garo J.. Apparatus and method for depositing materials onto microelectronic workpieces. USP2008067387685.
  3. Kobayashi, Shinji; Kitano, Takahiro; Sugimoto, Shinichi. Apparatus and method for drying under reduced pressure, and coating film forming apparatus. USP2005116966949.
  4. Kobayashi,Shinji; Kitano,Takahiro; Sugimoto,Shinichi. Apparatus and method for drying under reduced pressure, and coating film forming apparatus. USP2007047205025.
  5. Yokomizo,Kenji. Apparatus and method of securing a workpiece during high-pressure processing. USP2007097270137.
  6. Shinya, Hiroshi; Mizumoto, Kazuyoshi; Hayashida, Kazuhisa; Sekimoto, Eiichi. Apparatus and method of thermal processing and method of pattern formation. USP2003066573031.
  7. Mardian, Allen P.; Rodriguez, Santiago R.. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes. USP2009097581511.
  8. Derderian,Garo J.. Apparatus and methods for plasma vapor deposition processes. USP2008017323231.
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  10. Kim, Changsung Sean; Yoo, Sang Duk; Hong, Jong Pa; Shim, Ji Hye; Lee, Won Shin. Chemical vapor deposition apparatus. USP2012108298338.
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  15. Long, Maolin. Gas temperature control for a plasma process. USP2009057531061.
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  20. Takashi Tanaka JP; Shinji Nagashima JP; Hiroyuki Sakai JP. Heat treatment apparatus and method. USP2002126501191.
  21. Tanaka, Takashi; Nagashima, Shinji. Heat treatment apparatus and method. USP2003076590186.
  22. Jones, William D.. High pressure fourier transform infrared cell. USP2010087767145.
  23. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert. High pressure processing chamber for semiconductor substrate. USP2007087255772.
  24. Jones,William Dale. High-pressure processing chamber for a semiconductor wafer. USP2007067225820.
  25. Tzu, Gwo-Chuan; Umotoy, Salvador P.. Lid assembly for a processing system to facilitate sequential deposition techniques. USP2017039587310.
  26. Minami, Tomohide; Shinya, Hiroshi; Kitano, Takahiro. Low-pressure dryer and low-pressure drying method. USP2004096796054.
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  29. Goshi,Gentaro. Method and apparatus for cooling motor bearings of a high pressure pump. USP2007037186093.
  30. Zheng,Lingyi A.; Doan,Trung T.; Breiner,Lyle D.; Ping,Er Xuan; Beaman,Kevin L.; Weimer,Ronald A.; Kubista,David J.; Basceri,Cem. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces. USP2008097422635.
  31. Beaman,Kevin L.; Weimer,Ronald A.; Breiner,Lyle D.; Ping,Er Xuan; Doan,Trung T.; Basceri,Cem; Kubista,David J.; Zheng,Lingyi A.. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers. USP2008037344755.
  32. Carpenter,Craig M.; Dynka,Danny. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers. USP2008027335396.
  33. Dando, Ross S.; Gealy, Dan. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces. USP2015059023436.
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  35. Dhindsa, Rajinder; Srinivasan, Mukund. Process tuning gas injection from the substrate edge. USP2012018097120.
  36. Lee,Jae cheol; Lim,Chang bin; Han,Kwi young. Reaction apparatus for atomic layer deposition. USP2006097105059.
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  38. Dando, Ross S.. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces. USP2009097588804.
  39. Miller, Matthew W.; Basceri, Cem. Reactors, systems and methods for depositing thin films onto microfeature workpieces. USP2010047699932.
  40. Sugimoto,Shinichi; Honda,Masayuki. Reduced pressure drying apparatus and reduced pressure drying method. USP2008037343698.
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  44. Fovell, Richard; Brillhart, Paul; Yi, Sang In; Khan, Anisul H.; Dinev, Jivko; Nevil, Shane. Substrate support temperature control. USP2013128596336.
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  46. Jacobson,Gunilla; Yellowaga,Deborah. Treatment of a dielectric layer using supercritical CO. USP2008067387868.
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