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Carbide nanomaterials 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • D01F-009/08
  • D01F-009/12
출원번호 US-0477080 (1995-06-07)
발명자 / 주소
  • Lieber Charles M.
  • Dai Hongjie
출원인 / 주소
  • President and Fellows of Harvard College
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 199  인용 특허 : 5

초록

A nanoscale carbide article consisting essentially of covalently bounded elements M.sup.1, M.sup.2, and C having the molar ratio M.sup.1 :M.sup.2 :C::1:y:x, wherein the article has an aspect ratio of between 10 and 1000 and has a shorter axis of between 1 and 40 nanometers.

대표청구항

[ What is claimed is:] [1.] A carbide nanorod consisting essentially of TiC, NbC, Fe.sub.3 C, or BC.sub.x in which x is between 0.1 and 2.1, inclusive, wherein said nanorod has an aspect ratio of between 11 and 1000, and has a shorter axis of between 1 and 40 nanometers.

이 특허에 인용된 특허 (5)

  1. D\Angelo Charles (Southboro MA) Baldoni ; II Joseph G. (Norfolk MA) Buljan Sergej-Tomislav (Acton MA), Chemical vapor deposition reactor for producing metal carbide or nitride whiskers.
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  2. D\Angelo Charles (Southboro MA) Baldoni ; II Joseph G. (Norfolk MA) Buljan Sergej-Tomislav (Acton MA), Metal carbide, nitride, or carbonitride whiskers coated with metal carbides, nitrides, carbonitrides, or oxides.
    상세보기
  3. Nadkarni Sadashiv (Jonquiere CAX) Jain Mukesh (Jonquiere CAX) Huni Jean-Paul (Jonquiere CAX), Process for producing silicon carbide and metal carbides.
    상세보기
  4. Dubots Dominique (Le Fayet FRX) Dubrous Francis (Sallanches FRX), Process for the preparation of silicon carbide whiskers.
    상세보기
  5. Qi Dongxin (Placentia CA) Coyle Roy T. (Yorba Linda CA) Tait Richard D. (Fullerton CA) Orth Rick J. (Diamond Bar CA), Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers.
    상세보기

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