초록 ▼

This invention relates to a new improved method and structure in the fabricating of aluminum metal pads. The formation special aluminum bond pad metal structures are described which improve adhesion between the tantalum nitride pad barrier layer and the underlying copper pad metallurgy by a special

This invention relates to a new improved method and structure in the fabricating of aluminum metal pads. The formation special aluminum bond pad metal structures are described which improve adhesion between the tantalum nitride pad barrier layer and the underlying copper pad metallurgy by a special interlocking bond pad structure. It is the object of the present invention to provide a process wherein a special grid of interlocking via structures is placed in between the underlying copper pad metal and the top tantalum nitride pad barrier layer providing improved adhesion to the aluminum pad metal stack structure. This unique contact bond pad structure provides for thermal stress relief, improved wire bond adhesion to the aluminum pad, and prevents peeling during wire bond adhesion tests.

대표청구항 ▼

[ What is claimed is:] [1.] A method of fabricating an integrated circuit and other devices on a substrate, the method comprising the following steps:providing a substrate;providing said substrate with a layer of dielectric, termed an interlevel dielectric (ILD) over the substrate;providing a first

[ What is claimed is:] [1.] A method of fabricating an integrated circuit and other devices on a substrate, the method comprising the following steps:providing a substrate;providing said substrate with a layer of dielectric, termed an interlevel dielectric (ILD) over the substrate;providing a first level of metal wiring being defined and embedded in a first layer of insulator over the layer of dielectric;depositing a blanket of passivating dielectric layer (IMD) over the defined said first level of metal wiring;patterning and etching the said passivating dielectric (IMD) to form special interlocking grid structures with open contact regions to underlying first level metal wiring;depositing a blanket of a metal barrier layer;patterning and defining the said metal barrier layer on top of the interlocking grid structures;depositing a blanket of a metal layer for metal pad formation on top of the interlocking grid structures;patterning and defining the said metal pad layer to form metal pads on interlocking grid structures;repeating the above process stops to construct multilevel pad structures by this robust method to form metal pad contact structures for chips and IC's.