초록 ▼

The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by double sided scrubbing with a c

The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by double sided scrubbing with a chemical agent. Embodiments include removing portions up to 60 .ANG. of silicon oxide by double sided scrubbing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, and dionized water, with or without a surfactant.

대표청구항 ▼

[What is claimed is:] [1.]forming a copper (Cu) or Cu alloy interconnection pattern comprising a dense array of spaced apart Cu or Cu alloy lines bordering an open dielectric field on a surface of the wafer; andchemically treating the wafer surface by double sided brush scrubbing the wafer with a ch

[What is claimed is:] [1.]forming a copper (Cu) or Cu alloy interconnection pattern comprising a dense array of spaced apart Cu or Cu alloy lines bordering an open dielectric field on a surface of the wafer; andchemically treating the wafer surface by double sided brush scrubbing the wafer with a chemical agent.