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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0250399 (1999-02-16) |
| 우선권정보 | JP0339588 (1993-12-03) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 294 인용 특허 : 133 |
Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semi
Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semiconductor integrated circuit chips. After the semiconductor integrated circuit chips are adhered to the substrate, the chips are connected with wirings formed on the substrate by a chip on glass (COG) method, a wire bonding method or the like, to manufacture the electric device having a liquid crystal display (LCD) on one substrate.
[What is claimed is:] [1.]a first gate electrode;a first gate insulating film formed on said first gate electrode;a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity d
[What is claimed is:] [1.]a first gate electrode;a first gate insulating film formed on said first gate electrode;a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;a second gate insulating film formed on said semiconductor layer;a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;an interlayer insulating film comprising silicon nitride covering said thin film transistor.
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