초록 ▼

In accordance with one aspect of the present invention, a semiconductor device manufacturing method includes the steps of forming an element isolation region 51 on one main surface of a semiconductor substrate 50, forming a gate electrode 53, forming source and drain electrodes 56, forming an insula

In accordance with one aspect of the present invention, a semiconductor device manufacturing method includes the steps of forming an element isolation region 51 on one main surface of a semiconductor substrate 50, forming a gate electrode 53, forming source and drain electrodes 56, forming an insulator nitride film 57 on the main surface of the semiconductor substrate 50, forming an interlayer insulator 58 with more than one contact hole H, converting part of the insulator nitride film 57 at the bottom of the contact hole H into a conductive nitride film 61 that is higher in bonding energy than the insulative nitride, and forming wiring layer 62 connected to the source/drain electrodes 56 through the conductive nitride film 61.

대표청구항 ▼

[What is claimed is:] [1.]forming a gate electrode adjacent to a main surface of a semiconductor substrate;forming a source and a drain electrode in the main surface of the semiconductor substrate, the gate electrode disposed between the source electrode and the drain electrode;forming a first nitri

[What is claimed is:] [1.]forming a gate electrode adjacent to a main surface of a semiconductor substrate;forming a source and a drain electrode in the main surface of the semiconductor substrate, the gate electrode disposed between the source electrode and the drain electrode;forming a first nitride layer over one of the gate electrode, the source electrode, and the drain electrode, the first nitride layer comprising insulator nitride, the insulator nitride being compound of nitrogen and a material;forming an interlayer insulator over the first nitride layer, and the interlayer insulator has a through-hole above one of the gate electrode, the source electrode, and the drain electrode;forming a second nitride layer comprising a conductive nitride, the second nitride layer being at a bottom of the through-hole; andforming a wiring layer in the through-hole, the wiring layer coupled to one of the gate electrode, the source electrode, and the drain electrode, through the second nitride layer,wherein bonding energy of the conductive nitride is higher than that of the insulator nitride.