초록 ▼

A method for forming a dual damascene structure in a carbon-based, low-K material. The process begins by providing a semiconductor structure having a first metal pattern thereover, wherein the first metal pattern has a first barrier layer thereon. An organic dielectric layer is formed on the first b

A method for forming a dual damascene structure in a carbon-based, low-K material. The process begins by providing a semiconductor structure having a first metal pattern thereover, wherein the first metal pattern has a first barrier layer thereon. An organic dielectric layer is formed on the first barrier layer, and a hard mask layer is formed on the dielectric layer. The hard mask layer and the dielectric layer are patterned to form a trench. A second barrier layer is formed over the hard mask layer and on the bottom and sidewalls of the trench. A barc layer is formed over the second barrier layer, thereby filling the trench. The barc layer, the second barrier layer, and the dielectric layer are patterned to form a via opening, preferably using a photoresist mask. The barc layer is patterned without faceting the edges of the via opening due to the second barrier layer. The barc layer and the etch mask are removed by the dielectric layer etch. The first barrier layer and the second barrier layer are removed. A third barrier layer is formed on the bottom and sidewalls of the trench, on the sidewalls of the via opening, and on the first metal pattern through the via opening. The trench and the via opening are filled with metal to form a damascene structure.

대표청구항 ▼

[What is claimed is:] [1.]a. providing a semiconductor structure having a first metal pattern thereover; said first metal pattern having a first barrier layer thereon;b. forming an organic dielectric layer on said first barrier layer;c. forming a hard mask layer on said organic dielectric layer;d. f

[What is claimed is:] [1.]a. providing a semiconductor structure having a first metal pattern thereover; said first metal pattern having a first barrier layer thereon;b. forming an organic dielectric layer on said first barrier layer;c. forming a hard mask layer on said organic dielectric layer;d. forming a trench through said hard mask layer and into said organic dielectric layer; said trench having a bottom and sidewalls;e. forming a second barrier layer over said hard mask layer and on the bottom and sidewalls of said trench;f. forming a bottom anti-reflective coating layer over said second barrier layer;g. patterning said bottom anti-reflective coating layer, said second barrier layer, and said organic dielectric layer to form a via opening; said via opening having a bottom comprising said first barrier layer and having sidewalls;h. removing said bottom anti-reflective coating layer;i. removing said first barrier layer from said bottom of said via opening and said second barrier layer from said bottom of said trench;j. forming a third barrier layer on said bottom and sidewalls of said trench, on said sidewalls of said via opening, and on said first metal pattern through said via opening; andk. forming a metal plug in said trench and said via opening to form a damascene structure.