초록 ▼

A process used during the formation of a semiconductor device comprises the steps of placing a plurality of semiconductor wafers each having a surface into a chamber of a batch wafer processor such as a diffusion furnace. The wafers are heated to a temperature of between about 300.degree. C. and abo

A process used during the formation of a semiconductor device comprises the steps of placing a plurality of semiconductor wafers each having a surface into a chamber of a batch wafer processor such as a diffusion furnace. The wafers are heated to a temperature of between about 300.degree. C. and about 550.degree. C. With the wafers in the chamber, at least one of ammonia and hydrazine is introduced into the chamber, then a precursor comprising trimethylethylenediamine tris(dimethylamino)titanium and/or triethylaluminum is introduced into the chamber. In the chamber, a layer comprising aluminum nitride is simultaneously formed over the surface of each wafer. The inventive process allows for the formation of aluminum nitride or titanium aluminum nitride over the surface of a plurality of wafers simultaneously. A subsequent anneal of the aluminum nitride layer or the titanium aluminum nitride layer can be performed in situ.

대표청구항 ▼

[ What is claimed is:] [1.]1. A process used to form a film comprising aluminum nitride comprising the following steps:placing at least two wafers into a diffusion furnace;increasing a temperature of said wafers in said diffusion furnace;with said wafers in said furnace, introducing an aluminum nitr

[ What is claimed is:] [1.]1. A process used to form a film comprising aluminum nitride comprising the following steps:placing at least two wafers into a diffusion furnace;increasing a temperature of said wafers in said diffusion furnace;with said wafers in said furnace, introducing an aluminum nitride precursor into said diffusion furnace; andin said furnace, forming a layer comprising aluminum nitride from said aluminum nitride precursor over a surface of each wafer.