초록 ▼

A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed

A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed while the second insulating film has extensions which extend beyond the side edges of the gate electrode, and performing ion introduction for forming impurity regions using the gate electrode and extensions of the gate insulating film as a mask. The condition of the ion introduction is varied in order to control the regions of the semiconductor layer to be added with the impurity and the concentration of the impurity therein.

대표청구항 ▼

[ What is claimed is:] [1.]1. A semiconductor integrated circuit comprising:a substrate;an active matrix circuit comprising a first plurality of thin film transistors formed over a first portion of said substrate, each of said first plurality of thin film transistors including a channel region compr

[ What is claimed is:] [1.]1. A semiconductor integrated circuit comprising:a substrate;an active matrix circuit comprising a first plurality of thin film transistors formed over a first portion of said substrate, each of said first plurality of thin film transistors including a channel region comprising an amorphous semiconductor;a peripheral driving circuit comprising a second plurality of thin film transistors formed over a second portion of said substrate for driving said first plurality of thin film transistors, each of said second plurality of thin film transistors including a channel region comprising a crystalline semiconductor,wherein an active layer of each of said second plurality of thin film transistors comprises said channel region, a pair of impurity regions between which said channel region extends, and a pair of metal silicide regions doped with one conductivity type impurity at a first concentration adjacent to said impurity regions, said impurity regions having a higher resistance than said metal silicide regions,wherein said impurity regions are doped with an impurity having the same conductivity type as said one conductivity type impurity at a lower concentration than said first concentration and are not covered with said metal silicide regions.