초록 ▼

A metal electrode also serving as a black matrix is so formed as to cover the periphery of an ITO pixel electrode. A region where the pixel electrode and the metal electrode coextend also serves as an auxiliary capacitor. Since the auxiliary capacitor can be formed by using a thin insulating film, i

A metal electrode also serving as a black matrix is so formed as to cover the periphery of an ITO pixel electrode. A region where the pixel electrode and the metal electrode coextend also serves as an auxiliary capacitor. Since the auxiliary capacitor can be formed by using a thin insulating film, it can have a large capacitance. By virtue of the structure in which the black matrix also serves as the auxiliary capacitor, it is not necessary to provide an electrode dedicated to the auxiliary capacitor, thereby preventing reduction in aperture ratio. Further, the black matrix can completely shield a source line and a gate line from light.

대표청구항 ▼

[ What is claimed:] [1.]1. A display device comprising:a substrate;a plurality of parallel source lines and a plurality of parallel gate lines formed over said substrate, said source line and gate lines being arranged relative to one another to form a matrix of pixel regions over said substrate with

[ What is claimed:] [1.]1. A display device comprising:a substrate;a plurality of parallel source lines and a plurality of parallel gate lines formed over said substrate, said source line and gate lines being arranged relative to one another to form a matrix of pixel regions over said substrate with each of said pixel regions bounded by two adjacent source lines and two adjacent gate lines;a plurality of thin film transistors formed on said substrate, at least one thin film transistor disposed at each intersection of said source lines and gate lines in each of said pixel regions;a first interlayer insulating film formed over said thin film transistors;a black matrix comprising a light shielding electrode formed on said first interlayer insulating film and configured to have a matrix pattern with respect to said matrix of pixel regions, said light shielding electrode disposed to cover completely said source lines and said gate lines and to leave exposed a portion of each of said pixel regions;a second interlayer insulating film formed on said light shielding electrode;a pixel electrode disposed in each of said pixel regions on said second interlayer insulating film, wherein a periphery of said pixel electrode overlaps with said light shielding electrode to form an auxiliary capacitor with said light shielding electrode, said second interlayer insulating film and said pixel electrode; anda counter electrode in electrical communication with said light shielding electrode, wherein said light shielding electrode is electrically connected to a same potential as the counter electrode, said. [7.]7. A display device comprising:a substrate;a plurality of parallel source lines and a plurality of parallel gate lines formed over said substrate, said source lines and gate lines being arranged relative to one another to form a matrix of pixel regions over said substrate;a plurality of thin film transistors formed over said substrate, at least one thin film transistor disposed at each intersection of said source lines and gate lines in each of said pixel regions;a first interlayer insulating film formed over said thin film transistors;a light shielding conductive layer formed over said first interlayer insulating film and configured to have a matrix pattern with respect to said matrix of pixel regions, said light shielding conductive layer disposed to cover said source lines and said gate lines and to leave exposed a portion of each of said pixel regions;a second insulating film formed on said light shielding conductive layer; anda pixel electrode disposed in each of said pixel regions over said second insulating film, wherein a periphery of said pixel electrode overlaps with said light shielding conductive layer to form an auxiliary capacitor with said light shielding conductive layer, said second interlayer insulating film and said pixel electrode,wherein a periphery of said pixel electrode is overlapped with corresponding one of said source lines, and said light shielding conductive layer extends between the pixel electrode and said one of the source lines.