초록 ▼

A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacturing of integrated circuits is described. A field oxide region is formed in and on a semiconductor substrate and then removed whereby a well is left in the semiconductor substrate. A polish stop layer is d

A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacturing of integrated circuits is described. A field oxide region is formed in and on a semiconductor substrate and then removed whereby a well is left in the semiconductor substrate. A polish stop layer is deposited over the substrate and within the well. The polish stop layer is covered and the well filled with a spin-on-glass layer. The spin-on-glass layer is polished back to the polish stop layer. The said polish stop layer is removed. A first oxide layer is deposited overlying the spin-on-glass layer and the semiconductor substrate and is patterned using an inductor reticle whereby a plurality of openings are made through the first oxide layer to the spin-on-glass layer. All of the spin-on-glass layer within the well is removed through the plurality of openings. Thereafter, a second oxide layer is deposited overlying the first oxide layer and capping the plurality of openings thereby forming an air barrier within the well. A metal layer is deposited overlying the second oxide layer and patterned using the same inductor reticle to form the inductor in the fabrication of an integrated circuit device.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of fabricating an inductor in the fabrication of an integrated circuit device comprising:forming a field oxide region in and on a semiconductor substrate;removing said field oxide region whereby a well is left in said semiconductor substrate;depositing a polish

[ What is claimed is:] [1.]1. A method of fabricating an inductor in the fabrication of an integrated circuit device comprising:forming a field oxide region in and on a semiconductor substrate;removing said field oxide region whereby a well is left in said semiconductor substrate;depositing a polish stop layer over said substrate and within said well;covering said polish stop layer and filling said well with a spin-on-glass layer;polishing back said spin-on-glass layer to said polish stop layer;depositing a first oxide layer overlying said spin-on-glass layer and said semiconductor substrate;patterning said first oxide layer using an inductor reticle whereby a plurality of openings are made through said first oxide layer to said spin-on-glass layer;removing all of said spin-on-glass layer within said well through said plurality of openings;thereafter depositing a second oxide layer overlying said first oxide layer and capping said plurality of openings thereby forming an air barrier within said well; anddepositing a metal layer overlying said second oxide layer and patterning said metal layer using same said inductor reticle to form said inductor in the fabrication of said integrated circuit.