초록 ▼

There are provided a method of producing an SOI wafer of high quality with excellent controllability, productivity and economy and a wafer produced by such a method. In the method of producing a substrate utilizing wafer bonding, a first substrate member and a second substrate member are mutually bo

There are provided a method of producing an SOI wafer of high quality with excellent controllability, productivity and economy and a wafer produced by such a method. In the method of producing a substrate utilizing wafer bonding, a first substrate member and a second substrate member are mutually bonded, and then the second substrate member is separated from the first substrate member at the interface of a first layer and a second layer formed on the main surface of the first substrate member, whereby the second layer is transferred onto the second substrate member. In the separation, the separation position at the interface of the first and the second layers is ensured by varying the porosity of a porous Si layer, forming an easily separable plane by the coagulation of pores in porous Si, effecting ion implantation to the interface or utilizing a heteroepitaxial interface.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of producing a substrate, which comprises the steps of:preparing a first substrate member having a first layer and a second layer provided on and adjacent to the first layer,bonding the first substrate member to a second substrate member,separating the first su

[ What is claimed is:] [1.]1. A method of producing a substrate, which comprises the steps of:preparing a first substrate member having a first layer and a second layer provided on and adjacent to the first layer,bonding the first substrate member to a second substrate member,separating the first substrate member and the second substrate member to transfer the second layer onto the second substrate member,heat-treating the second layer transferred onto the second substrate member in a non-oxidative atmosphere,wherein the separation of the first substrate member and the second substrate member is conducted by an interface of the first layer and the second layer.