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Semiconductor device and fabrication method thereof

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
  • H01L-021/20
출원번호 US-0233450 (1999-01-20)
우선권정보 JP0026037 (1996-01-20)
발명자 / 주소
  • Yamazaki Shunpei,JPX
  • Teramoto Satoshi,JPX
  • Koyama Jun,JPX
  • Ogata Yasushi,JPX
  • Hayakawa Masahiko,JPX
  • Osame Mitsuaki,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Nixon Peabody LLPCostellia
인용정보 피인용 횟수 : 53  인용 특허 : 149

초록

Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film. Then, after obt

대표청구항

[ What is claimed is:] [1.]1. A method for fabricating a semiconductor device, comprising steps of:forming a semiconductor film comprising amorphous silicon over a substrate;introducing a metal element which promotes crystallization of silicon to said semiconductor film;crystallizing said semiconduc

이 특허에 인용된 특허 (149)

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