초록 ▼

The disclosed is a read only memory having a plurality of memory blocks each associated with main bit lines and sub-bit lines, and a plurality of memory cells for storing information, and sense amplifiers for reading the information stored in the memory cells through the main bit lines. The memory a

The disclosed is a read only memory having a plurality of memory blocks each associated with main bit lines and sub-bit lines, and a plurality of memory cells for storing information, and sense amplifiers for reading the information stored in the memory cells through the main bit lines. The memory also has a block selection part disposed between the blocks and having a plurality of block selection transistors connecting the main bit lines to the sub-bit lines. The sub-bit lines elongate to at least an adjacent block and alternatively connected to the main bit lines through the block selection part.

대표청구항 ▼

[ What is claimed is:] [1.]1. A read only memory, comprising:a plurality of main bit lines;a plurality of sub-bit lines;a plurality of memory blocks each associated with the main bit lines and the sub-bit lines, and each containing a plurality of memory cells for storing information;a plurality of s

[ What is claimed is:] [1.]1. A read only memory, comprising:a plurality of main bit lines;a plurality of sub-bit lines;a plurality of memory blocks each associated with the main bit lines and the sub-bit lines, and each containing a plurality of memory cells for storing information;a plurality of sense amplifiers for reading the information stored in the memory cells through the main bit linesa block selection part disposed between the memory blocks, having a plurality of block selection transistors connecting the main bit lines to the sub-bit lines;wherein the sub-bit lines elongate to at least an adjacent block and are alternatively connected to the main bit lines through the block selection part.