초록 ▼

A thermoelectric element (1) comprises a partitioning plate (2) having electrical insulating properties; equal numbers of p-type thermoelectric semiconductor elements (3A) and n-type thermoelectric semiconductor elements (3B) fixed to the partitioning plate (2) in a state in which they pass through

A thermoelectric element (1) comprises a partitioning plate (2) having electrical insulating properties; equal numbers of p-type thermoelectric semiconductor elements (3A) and n-type thermoelectric semiconductor elements (3B) fixed to the partitioning plate (2) in a state in which they pass through the partitioning plate (2); flat copper electrodes (4) fixed to upper sides of the p-type thermoelectric semiconductor elements (3A) and n-type thermoelectric semiconductor elements (3B); and T-shaped copper electrodes (5) fixed to lower sides of the p-type thermoelectric semiconductor elements (3A) and n-type thermoelectric semiconductor elements (3B). Lower portions protruding from the lower surface of the partitioning plate (2) are accommodated within a cooling vessel and are cooled directly by a coolant or air.

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[ What is claimed is:] [1.]1. A thermoelectric element comprising:(a) a partitioning plate having electrical insulating properties;(b) a p-type thermoelectric semiconductor element and an n-type thermoelectric semiconductor element fixed to said partitioning plate in a state passing through said par

[ What is claimed is:] [1.]1. A thermoelectric element comprising:(a) a partitioning plate having electrical insulating properties;(b) a p-type thermoelectric semiconductor element and an n-type thermoelectric semiconductor element fixed to said partitioning plate in a state passing through said partitioning plate;(c) a first metal electrode connected to a first surface of said p-type thermoelectric semiconductor element and said n-type thermoelectric semiconductor element; and(d) a second metal electrode connected to a second surface of said p-type thermoelectric semiconductor element and said n-type thermoelectric semiconductor element;wherein the shape of at least one of said first metal electrode and said second metal electrode is selected from the group consisting of: a T-shape, an inverted U-shape, an inverted L-shape and a .pi.-shape.