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Plasma processor with coil having variable rf coupling 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01J-007/24
  • H05B-031/26
출원번호 US-0281807 (1999-03-31)
발명자 / 주소
  • Ni Tiqiang
  • Collison Wenli
  • Holland John P.
출원인 / 주소
  • Lam Research Corporation
대리인 / 주소
    Lowe Hauptman Gilman & Berner, LLP
인용정보 피인용 횟수 : 34  인용 특허 : 12

초록

A coil for exciting an r.f. plasma in a vacuum plasma processing chamber includes plural radially and circumferentially extending turns connected between a pair of r.f. excitation terminals. In one embodiment, a drive mechanism varies r.f. field coupling coefficients between different radial and cir

대표청구항

[ We claim:] [1.]1. A method of controlling an r.f. plasma treating one or more workpieces in a vacuum plasma processing chamber, the workpiece being on a workpiece holder, the method being performed in accordance with one of plural recipes each including a set of parameters, the parameters associat

이 특허에 인용된 특허 (12)

  1. Patrick Roger (Santa Clara CA) Bose Frank (Wettingen CA CHX) Schoenborn Philippe (San Jose CA) Toda Harry (Santa Clara CA), Coil configurations for improved uniformity in inductively coupled plasma systems.
  2. Watanabe Tsuneo (Yokohama JPX) Kodaka Yoshiro (Tokyo JPX), Diaphragm device.
  3. Holland John Patrick ; Barnes Michael S., Inductively coupled source for deriving substantially uniform plasma flux.
  4. Gates Duane Charles, Low inductance large area coil for an inductively coupled plasma source.
  5. Ogle John S. (1472 Pashote Ct. Milpitas CA 95035), Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a co.
  6. Ogle John S. (Milpitas CA), Method and apparatus for producing magnetically-coupled planar plasma.
  7. Chen Ching-Hwa (Milpitas CA) Liu David (San Jose CA) Tran Duc (Saratoga CA), Method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric windo.
  8. Chen Ching-Hwa (Milpitas CA) Liu David (San Jose CA) Tran Duc (Saratoga CA), Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber.
  9. Yoshida Kazuyoshi (Tokyo JPX) Miyamoto Hidenobu (Tokyo JPX), Plasma processing apparatus for manufacture of semiconductor devices.
  10. Coultas Dennis K. (Hopewell Junction NY) Keller John H. (Poughkeepsie NY), Radio frequency induction/multipole plasma processing tool.
  11. Gates Duane Charles, Segmented coil for generating plasma in plasma processing equipment.
  12. Holland John Patrick ; Barnes Michael S., Vacuum plasma processor having coil with minimum magnetic field in its center.

이 특허를 인용한 특허 (34)

  1. Chen, Ying-Lin; Kao, Chi-An; Chen, Po-Zen; Hsiao, Yi-Li; Yu, Chen-Hua; Wang, Jean; Sheu, Lawrance, Adjustable electrodes and coils for plasma density distribution control.
  2. Kim, Hyung Joon; Woo, Hyung Je, Antenna units, substrate treating apparatuses including the same, and substrate treating methods using the apparatuses.
  3. Liu, Wei; Swenberg, Johanes F.; Nguyen, Hanh D.; Nguyen, Son T.; Curtis, Roger; Bottini, Philip A.; Mark, Michael J., Apparatus and method for controlling edge performance in an inductively coupled plasma chamber.
  4. Hao, Fangli J., Apparatus for elimination of plasma lighting inside a gas line in a strong RF field.
  5. Dandl, Raphael A.; Quon, Bill H.; Antley, Samuel S; Mitrovic, Andrej S.; Johnson, Wayne L., Applied plasma duct system.
  6. Parsons, Richard, Control of power delivered to a multiple segment inject electrode.
  7. Liu, Wei; Swenberg, Johanes S.; Nguyen, Hanh D.; Nguyen, Son T.; Curtis, Roger; Bottini, Philip A., Dual zone gas injection nozzle.
  8. Lajoie, Hugues; Han, Cheol Hee; Park, Sung Chan, Endless track for propelling a vehicle, with edge-cutting resistance.
  9. Lussier, Alain; Leblanc, François; Boily, Patrice, Endless track for traction of a vehicle.
  10. Vukovic, Mirko, Internal antennae for plasma processing with metal plasma.
  11. Bailey ; III Andrew D. ; Schoepp Alan M. ; Kuthi Andras, Method and apparatus for producing uniform process rates.
  12. Johnson, David; Westerman, Russell, Method and apparatus to improve plasma etch uniformity.
  13. Wilcoxson, Mark H.; Bailey, III, Andrew D., Method for producing a semiconductor device.
  14. Liu, Wei; Swenberg, Johanes F.; Nguyen, Hanh D.; Nguyen, Son T.; Curtis, Roger; Bottini, Philip A., Method of correcting baseline skew by a novel motorized source coil assembly.
  15. Chandrachood,Madhavi R.; Lewington,Richard; Bivens,Darin; Kumar,Ajay; Ibrahim,Ibrahim M.; Grimbergen,Michael N.; Koch,Renee; Panayil,Sheeba J., Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator.
  16. Chandrachood, Madhavi R.; Lewington, Richard; Bivens, Darin; Kumar, Ajay; Ibrahim, Ibrahim M.; Grimbergen, Michael N.; Koch, Renee; Panayil, Sheeba J., Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another.
  17. Fair, James A.; Decaux, Vincent; Guha, Anirban; Cheung, David; Keller, John; Jagusch, Peter, Plasma generator apparatus.
  18. Caron, James, Plasma generator systems and methods of forming plasma.
  19. Qiu, Huatan; Cheung, David; Kothnur, Prashanth, Plasma generator systems and methods of forming plasma.
  20. Nishimura, Eiichi; Yoneyama, Shimao, Plasma processing apparatus.
  21. Yamazawa, Yohei; Koshimizu, Chishio; Saito, Masashi; Denpoh, Kazuki; Yamawaku, Jun, Plasma processing apparatus.
  22. Yamazawa, Yohei; Koshimizu, Chishio; Saito, Masashi; Denpoh, Kazuki; Yamawaku, Jun, Plasma processing apparatus.
  23. Yamazawa, Yohei; Koshimizu, Chishio; Denpoh, Kazuki; Yamawaku, Jun; Saito, Masashi, Plasma processing apparatus and plasma processing method.
  24. Yamazawa, Yohei; Koshimizu, Chishio; Saito, Masashi; Denpoh, Kazuki; Yamawaku, Jun, Plasma processing apparatus and plasma processing method.
  25. Yamazawa, Yohei; Koshimizu, Chishio; Saito, Masashi; Denpoh, Kazuki; Yamawaku, Jun; Iizuka, Hachishiro, Plasma processing apparatus and plasma processing method.
  26. Yamazawa, Yohei; Saito, Masashi; Denpoh, Kazuki; Koshimizu, Chishio; Yamawaku, Jun, Plasma processing apparatus and plasma processing method.
  27. Yamazawa, Yohei; Saito, Masashi; Denpoh, Kazuki; Koshimizu, Chishio; Yamawaku, Jun, Plasma processing apparatus and plasma processing method.
  28. Saito, Masashi, Plasma processing apparatus and processing gas supply structure thereof.
  29. Benjamin, Neil; Cooperberg, David, Plasma processor coil.
  30. Chandrachood,Madhavi R.; Lewington,Richard; Bivens,Darin; Kumar,Ajay; Ibrahim,Ibrahim M.; Grimbergen,Michael N.; Koch,Renee; Panayil,Sheeba J., Plasma reactor with a dynamically adjustable plasma source power applicator.
  31. Chandrachood,Madhavi R.; Lewington,Richard; Bivens,Darin; Kumar,Ajay; Ibrahim,Ibrahim M.; Grimbergen,Michael N.; Koch,Renee; Panayil,Sheeba J., Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another.
  32. Raphael A. Dandl ; Wayne L. Johnson ; Gareth Guest, Plasma vacuum pumping cell.
  33. Antolik, Jerrel Kent; Wang, Yen-kun Victor; Holland, John, Substrate support providing gap height and planarization adjustment in plasma processing chamber.
  34. Antolik, Jerrell Kent; Wang, Yen-kun Victor; Holland, John, Substrate support providing gap height and planarization adjustment in plasma processing chamber.
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