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Process for fabricating an array of nanowires 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-011/04
  • C25D-011/08
  • C25D-005/34
  • C25D-005/44
  • C25D-005/48
출원번호 US-0064439 (1998-04-22)
발명자 / 주소
  • Ying Jackie Y.
  • Zhang Zhibo
  • Zhang Lei
  • Dresselhaus Mildred S.
출원인 / 주소
  • Massachusetts Institute of Technology
대리인 / 주소
    Daly, Crowley & Mofford, LLP
인용정보 피인용 횟수 : 181  인용 특허 : 6

초록 ▼

An array of nanowires having a relativley constant diameter and techniques and apparatus for fabrication thereof are described. In one embodiment, a technique for melting a material under vacuum and followed by pressure injection of the molten material into the pores of a porous substrate produces c

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for providing a substrate for use in the fabrication of a nanowire array comprising:a) preparing an aluminum substrate;b) anodizing the aluminum substrate using an acidic electrolyte solution to provide a porous aluminum oxide film on a surface of said aluminum

이 특허에 인용된 특허 (6)

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    상세보기
  6. Moskovits Martin (145 Chiltern Hill Road Toronto ; Ontario CAX M5C 3C3), Process for manufacture of quantum dot and quantum wire semiconductors.
    상세보기

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