초록 ▼

A structure and methodology for providing electronic devices comprised of semiconductor materials deposited and crystallized using a pulsed laser source on oxide and/or metal layers on polymeric and polymer composite substrates of low coefficient of thermal expansion (CTE). The present invention per

A structure and methodology for providing electronic devices comprised of semiconductor materials deposited and crystallized using a pulsed laser source on oxide and/or metal layers on polymeric and polymer composite substrates of low coefficient of thermal expansion (CTE). The present invention permits the fabrication of inexpensive yet highly efficient electronic devices, such as photovoltaic cells, on the filled substrates by the use of laser annealing techniques.

대표청구항 ▼

[ What is claimed is:] [1.]1. A structure for a semiconductor device comprising:a) a polymer substrate including a particulate filler for reducing the CTE of the polymer to less than 40 ppm/.degree. C.;b) a first buffer layer disposed atop the substrate, said buffer layer having a thickness of less

[ What is claimed is:] [1.]1. A structure for a semiconductor device comprising:a) a polymer substrate including a particulate filler for reducing the CTE of the polymer to less than 40 ppm/.degree. C.;b) a first buffer layer disposed atop the substrate, said buffer layer having a thickness of less than 5 microns;c) at least one semiconductor layer disposed atop the first buffer layer, said semiconductor layer being at least partially laser annealed; andd) a second buffer layer disposed atop the at least one semiconductor layer said second buffer layer having a thickness of less than 2 microns.