초록 ▼

A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a

A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO.sub.2, where X is a metal.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of fabricating a semiconductor structure comprising the steps of:providing a silicon substrate having a surface;forming amorphous silicon dioxide on the surface of the silicon substrate;providing an alkaline-earth-metal on the amorphous silicon dioxide; andheat

[ What is claimed is:] [1.]1. A method of fabricating a semiconductor structure comprising the steps of:providing a silicon substrate having a surface;forming amorphous silicon dioxide on the surface of the silicon substrate;providing an alkaline-earth-metal on the amorphous silicon dioxide; andheating the semiconductor structure to form an interface comprising a single atomic layer adjacent the surface of the silicon substrate.