초록 ▼

The electromigration of a Cu or Cu alloy interconnection member is reduced by annealing the seed layer before electroplating or electroless plating the Cu or Cu alloy interconnection member on the seed layer. Embodiments include depositing a Cu or Cu alloy seed layer, annealing at about 100.degree.

The electromigration of a Cu or Cu alloy interconnection member is reduced by annealing the seed layer before electroplating or electroless plating the Cu or Cu alloy interconnection member on the seed layer. Embodiments include depositing a Cu or Cu alloy seed layer, annealing at about 100.degree. C. to about 400.degree. C. to increase the grain size of the seed layer and impart a (111)-dominant crystallographic option before plating the Cu or Cu alloy interconnect member thereon the seed layer

대표청구항 ▼

[ What is claimed is:] [1.]1. A method comprising:depositing a seed layer having an as-deposited first grain size;annealing the seed layer to increase its grain size to a second grain size greater than the first grain size; andelectroplating or electroless plating copper (Cu) or a Cu alloy on the an

[ What is claimed is:] [1.]1. A method comprising:depositing a seed layer having an as-deposited first grain size;annealing the seed layer to increase its grain size to a second grain size greater than the first grain size; andelectroplating or electroless plating copper (Cu) or a Cu alloy on the annealed seed layer.