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Method and apparatus for determining substrate layer thickness during chemical mechanical polishing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-049/00
  • B24B-001/00
출원번호 US-0237472 (1999-01-25)
발명자 / 주소
  • Wiswesser Andreas Norbert,DEX
  • Schoenleber Walter,DEX
  • Swedek Boguslaw
  • Birang Manoocher
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Fish & Richardson
인용정보 피인용 횟수 : 72  인용 특허 : 15

초록

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to gene

대표청구항

[ What is claimed is:] [1.]1. An apparatus for use in chemical mechanical polishing a substrate having a first surface and a second surface underlying the first surface, comprising:a first optical system including a first light source to generate a first light beam to impinge on the substrate, the f

이 특허에 인용된 특허 (15)

  1. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
  2. O\Boyle Martin Patrick (Peekskill NY) Panner John Charles (Underhill VT) Sandwick Thomas Edwin (Hopewell Junction NY) van Kessel Theodore Gerard (Millbrook NY) Wickramasinghe Hemantha Kumar (Chappaqu, Assembly and method for making in process thin film thickness measurments.
  3. Robinson Karl M. ; Yu Chris Chang, Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers.
  4. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  5. Sun Mei H. ; Litvak Herbert E. ; Tzeng Huey M. ; Glenn Daniel E. ; Jensen Earl M. ; Hausman Frank J. ; Zhou Lin Jun, In situ technique for monitoring and controlling a process of chemical-mechanical-polishing via a radiative communication link.
  6. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
  7. Tang Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical po.
  8. Schultz Laurence D. (Boise ID), Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
  9. Holzapfel Paul ; Schlueter James ; Karlsrud Chris ; Lin Warren, Methods and apparatus for detecting removal of thin film layers during planarization.
  10. Koos Daniel A. (Boise ID) Meikle Scott (Boise ID), Optical end point detection methods in semiconductor planarizing polishing processes.
  11. Takahashi Tsutomu (Yokohama JPX) Tohyama Keiichi (Kawasaki JPX) Takahashi Tamami (Yamato JPX), Polishing apparatus having endpoint detection device.
  12. Hiyama Hirokuni,JPX ; Wada Yutaka,JPX, Polishing apparatus including thickness or flatness detector.
  13. Roberts John V. H. (Newark DE), Polishing pads.
  14. Lund Douglas E., System and method of automatically polishing semiconductor wafers.
  15. Sandhu Gurtej S. (Boise ID) Doan Trung Tri (Boise ID), System for real-time control of semiconductor wafer polishing including optical monitoring.

이 특허를 인용한 특허 (72)

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  2. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  3. Allman, Derryl D. J.; Gregory, John W., Apparatus and method for planarizing the surface of a semiconductor wafer.
  4. Ritzdorf, Thomas L.; Eudy, Steve L.; Wilson, Gregory J.; McHugh, Paul R., Apparatus and method for processing a microelectronic workpiece using metrology.
  5. Ritzdorf,Thomas L.; Eudy,Steve L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and method for processing a microelectronic workpiece using metrology.
  6. Hanson,Kyle M., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  7. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  8. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  9. Agarwal, Vishnu K., Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  10. Agarwal,Vishnu K., Apparatuses and methods for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  11. Agarwal,Vishnu K., Apparatuses for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  12. Basol, Bulent; Talleh, Homayoun, Chemical mechanical polishing endpoint detection.
  13. Raymond R Jin ; Jeffrey Drue David ; Fred C Redeker ; Thomas H Osterheld, Chemical mechanical polishing processes and components.
  14. Swedek, Boguslaw A.; Adams, Bret W.; Rajaram, Sanjay; Chan, David A.; Birang, Manoocher, Computer-implemented process control in chemical mechanical polishing.
  15. Berman, Michael J., Determination of film thickness during chemical mechanical polishing.
  16. Wiswesser,Andreas Norbert; Schoenleber,Walter, Endpoint detection with multiple light beams.
  17. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  18. Matthew Weldon, Inline metrology device.
  19. Burke, Peter A.; Kirchner, Eric J.; Elmer, James R. B., Integrated circuit process monitoring and metrology system.
  20. Benvegnu,Dominic J., Iso-reflectance wavelengths.
  21. Wiswesser,Andreas Norbert; Schoenleber,Walter; Swedek,Boguslaw; Birang,Manoocher, Method and apparatus for determining polishing endpoint with multiple light sources.
  22. Boyd, John M.; Litvak, Herbert E., Method and apparatus for end point triggering with integrated steering.
  23. Zutshi, Ajoy; Bajaj, Rajeev; Redeker, Fred C.; Ma, Yutao; Wijekoon, Kapila, Method and apparatus for hard pad polishing.
  24. James J. Xie ; Jayanthi Pallinti ; Ronald J. Nagahara, Method for CMP endpoint detection.
  25. Birang, Manoocher; Gleason, Allan; Guthrie, William L., Method of forming a transparent window in a polishing pad.
  26. Ohkawa, Makoto, Method of measuring thickness of a semiconductor layer and method of manufacturing a semiconductor substrate.
  27. Birang,Manoocher; Smekalin,Konstantin Y.; Chan,David A., Methods and apparatus for polishing control.
  28. Ritzdorf,Thomas L.; Eudy,Steve L.; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Aegerter,Brian; Dundas,Curt; Peace,Steven L., Methods and apparatus for processing microelectronic workpieces using metrology.
  29. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for detecting a presence of blobs on a specimen during a polishing process.
  30. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device.
  31. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing.
  32. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.
  33. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.
  34. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.
  35. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.
  36. Elledge, Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.
  37. Elledge,Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.
  38. Elledge,Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.
  39. Dalrymple, Alice Madrone; Horrell, Robert J., Methods for optical endpoint detection during semiconductor wafer polishing.
  40. Wu, Jiann Lih; Hwang, Jeng-Jyi; Huang, Soon-Kang; Yang, Chi-Ming, Multi-point chemical mechanical polishing end point detection system and method of using.
  41. Scott E. Moore, Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates.
  42. Moore, Scott E., Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates.
  43. Moore, Scott E., Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates.
  44. Aaron T. Bartlett, Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies.
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  61. Dawn M. Lee ; Jayanthi Pallinti ; Weidan Li ; Ming-Yi Lee, Process for CMP removal of excess trench or via filler metal which inhibits formation of concave regions on oxide surface of integrated circuit structure.
  62. Bhatt, Hemanshu D.; Ahmed, Shafqat; Banerjee, Robindranath, Process for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines.
  63. Nagahara, Ronald J.; Xie, James J.; Ueno, Akihisa; Pallinti, Jayanthi, Process for selective polishing of metal-filled trenches of integrated circuit structures.
  64. May, Charles E.; Bhatt, Hemanshu, Semiconductor wafer arrangement and method of processing a semiconductor wafer.
  65. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  66. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  67. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  68. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  69. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., System for electrochemically processing a workpiece.
  70. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Systems and methods for characterizing a polishing process.
  71. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad.
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