$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Method of growing thin film electroluminescent structures 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
  • B05D-005/06
  • H01J-001/62
출원번호 US-0323821 (1999-06-02)
우선권정보 FI0001262 (1998-06-03)
발명자 / 주소
  • Harkonen Gitte,FIX
  • Kervinen Tomi,FIX
  • Soininen Erkki,FIX
  • Tornqvist Runar,FIX
  • Vasama Kirsi,FIX
  • Glanz Mario,DEX
  • Schumann Herbert,DEX
출원인 / 주소
  • Planar Systems Inc., FIX
대리인 / 주소
    McDermott, Will & Emery
인용정보 피인용 횟수 : 87  인용 특허 : 6

초록

The present invention concerns a method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy-method. According to the invention an organometallic cerium compound containing at least one cyclopentadienyl type ligand is used as a precursor for the dopant cerium. The cyclopentadieny

대표청구항

[ What is claimed is:] [1.]1. A method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy -method, comprising using an organometallic cerium compound containing at least one cyclopentadienyl type ligand as a precursor for the dopant cerium.

이 특허에 인용된 특허 (6)

  1. Ohseto Seiichi (Numazu JPX) Kobayashi Hiroshi (Totori JPX) Tanaka Shosaku (Totori JPX), Electroluminescence device.
  2. Migita Masahito (Hachioji JPX) Kanehisa Osam (Kodaira JPX) Shiiki Masatoshi (Kokubunji JPX) Yamamoto Hajime (Tokyo JPX), Electroluminescent display apparatus having a multi-color illuminant layer and process for producing the same.
  3. Mizutani Atsushi,JPX ; Katayama Masayuki,JPX ; Ito Nobuei,JPX ; Hattori Tadashi,JPX, Method and apparatus for fabricating electroluminescent device.
  4. Kawashima Tomoyuki (Kanagawa JPX) Taniguchi Harutaka (Kanagawa JPX) Kato Hisato (Kanagawa JPX) Shibata Kazuyoshi (Kanagawa JPX), Method of producing electroluminescence emitting film.
  5. Mizutani Atsushi (Aichi JPX) Katayama Masayuki (Handa JPX) Ito Nobuei (Chiryu JPX) Hattori Tadashi (Okazaki JPX), Process for producing electroluminescent device.
  6. Sun Sey-Shing (15375 SW. Nightingale Ct. Beaverton OR 97007) Bowen Michael S. (8825 SE. 30th Ave. Milwaukie OR 97222), TFEL phosphor having metal overlayer.

이 특허를 인용한 특허 (87)

  1. Chen, Chen-An; Gelatos, Avgerinos; Yang, Michael X.; Xi, Ming; Hytros, Mark M., Apparatus and method for plasma assisted deposition.
  2. Chen,Chen An; Gelatos,Avgerinos; Yang,Michael X.; Xi,Ming; Hytros,Mark M., Apparatus and method for plasma assisted deposition.
  3. Kim, Sam H.; Hosokawa, Akihiro; Suh, Dong Choon, Apparatus and method for uniform substrate heating and contaminate collection.
  4. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.
  5. Burba, III, John L.; Hassler, Carl R.; O'Kelley, C. Brock; Lupo, Joseph A.; Pascoe, Joseph R., Apparatus for treating a flow of an aqueous solution containing arsenic.
  6. Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposited titanium-doped indium oxide films.
  7. Chin,Barry L.; Mak,Alfred W.; Lei,Lawrence Chung Lai; Xi,Ming; Chung,Hua; Lai,Ken Kaung; Byun,Jeong Soo, Atomic layer deposition apparatus.
  8. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.
  9. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques.
  10. Inagawa,Makoto; Hosokawa,Akihiro, Chamber for uniform substrate heating.
  11. Shang, Quanyuan; Kardokus, Janine; Hosokawa, Akihiro, Chamber for uniform substrate heating.
  12. Shang,Quanyuan; Kardokus,Janine; Hosokawa,Akihiro, Chamber for uniform substrate heating.
  13. Burba, John, Composition and process for making the composition.
  14. Burba, III, John L., Composition for treating a fluid.
  15. Maula,Jarmo Ilmari; T철rnqvist,Runar Olof Ivar, Conformal coatings for micro-optical elements, and method for making the same.
  16. Yang, Michael X.; Xi, Ming, Cyclical deposition of a variable content titanium silicon nitride layer.
  17. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Cyclical deposition of tungsten nitride for metal oxide gate electrode.
  18. Wang,Shulin; Kroemer,Ulrich; Luo,Lee; Chen,Aihua; Li,Ming, Cyclical deposition of tungsten nitride for metal oxide gate electrode.
  19. Law, Kam; Shang, Quanyuan; Harshbarger, William Reid; Maydan, Dan, Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications.
  20. Law,Kam; Shang,Quanyuan; Harshbarger,William Reid; Maydan,Dan, Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications.
  21. Yoon, Hyungsuk A.; Fang, Hongbin; Yang, Michael X., Deposition of tungsten films.
  22. Lei, Lawrence C.; Kori, Moris, Dual robot processing system.
  23. Chen,Ling; Chang,Mei, Enhancement of copper line reliability using thin ALD tan film to cap the copper line.
  24. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  25. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  26. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  27. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  28. Seutter,Sean M.; Yang,Michael X.; Xi,Ming, Formation of a tantalum-nitride layer.
  29. Byun, Jeong Soo; Mak, Alfred, Formation of boride barrier layers using chemisorption techniques.
  30. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  31. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  32. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  33. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
  34. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
  35. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus for atomic layer deposition.
  36. Yudovsky, Joseph, Gas distribution system for cyclical layer deposition.
  37. Chung,Hua; Maity,Nirmalya; Yu,Jick; Mosely,Roderick Craig; Chang,Mei, Integration of ALD tantalum nitride for copper metallization.
  38. Chung, Hua; Chen, Ling; Yu, Jick; Chang, Mei, Integration of barrier layer and seed layer.
  39. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Integration of barrier layer and seed layer.
  40. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Integration of titanium and titanium nitride layers.
  41. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Integration of titanium and titanium nitride layers.
  42. Nguyen, Anh N.; Yang, Michael X.; Xi, Ming; Chung, Hua; Chang, Anzhong; Yuan, Xiaoxiong; Lu, Siqing, Lid assembly for a processing system to facilitate sequential deposition techniques.
  43. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
  44. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
  45. Xie, Qi; Tang, Fu; Givens, Michael Eugene; Maes, Jan Willem, Metal selenide and metal telluride thin films for semiconductor device applications.
  46. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer.
  47. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
  48. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method and system for controlling the presence of fluorine in refractory metal layers.
  49. Sinha,Ashok; Xi,Ming; Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
  50. Tang, Fu; Givens, Michael Eugene; Woodruff, Jacob Huffman; Xie, Qi; Maes, Jan Willem, Method for forming metal chalcogenide thin films on a semiconductor device.
  51. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method for forming tungsten materials during vapor deposition processes.
  52. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Method for forming tungsten materials during vapor deposition processes.
  53. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
  54. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
  55. Chen, Ling; Cao, Wei, Method for growing thin films by catalytic enhancement.
  56. Lai, Ken Kaung; Rajagopalan, Ravi; Khandelwal, Amit; Moorthy, Madhu; Gandikota, Srinivas; Castro, Joseph; Gelatos, Avgerinos V.; Knepfler, Cheryl; Jian, Ping; Fang, Hongbin; Huang, Chao-Ming; Xi, Ming; Yang, Michael X.; Chung, Hua; Byun, Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
  57. Lai,Ken Kaung; Rajagopalan,Ravi; Khandelwal,Amit; Moorthy,Madhu; Gandikota,Srinivas; Castro,Joseph; Gelatos,Averginos V.; Knepfler,Cheryl; Jian,Ping; Fang,Hongbin; Huang,Chao Ming; Xi,Ming; Yang,Michael X.; Chung,Hua; Byun,Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
  58. Xie, Qi; Tang, Fu; Givens, Michael; Raisanen, Petri; Maes, Jan Willem, Methods for semiconductor passivation by nitridation.
  59. Chalker, Paul Raymond; Heys, Peter Nicholas, Methods of producing high-K dielectric films using cerium-based precursors.
  60. Yang, Michael Xi; Yoon, Hyungsuk Alexander; Zhang, Hui; Fang, Hongbin; Xi, Ming, Multiple precursor cyclical deposition system.
  61. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
  62. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
  63. Raisanen, Petri; Marcus, Steven, Plasma-enhanced deposition process for forming a metal oxide thin film and related structures.
  64. Burba, III, John L.; Oriard, Tim L., Process and apparatus for treating a gas containing a contaminant.
  65. Song, Kevin; Ravi, Jallepally; Li, Shih-Hung; Chen, Liang-Yuh, Process conditions and precursors for atomic layer deposition (ALD) of AL2O3.
  66. Putkonen, Matti, Process for producing oxide thin films.
  67. Putkonen, Matti, Process for producing oxide thin films.
  68. Putkonen,Matti, Process for producing yttrium oxide thin films.
  69. Putkonen, Matti, Process for producing zirconium oxide thin films.
  70. Putkonen, Matti, Process for producing zirconium oxide thin films.
  71. Lu, Xinliang; Jian, Ping; Yoo, Jong Hyun; Lai, Ken Kaung; Mak, Alfred W.; Jackson, Robert L.; Xi, Ming, Pulsed deposition process for tungsten nucleation.
  72. Lu,Xinliang; Jian,Ping; Yoo,Jong Hyun; Lai,Ken Kaung; Mak,Alfred W.; Jackson,Robert L.; Xi,Ming, Pulsed nucleation deposition of tungsten layers.
  73. Cable, Robert; Hassler, Carl; Burba, John, Rare earth removal of hydrated and hydroxyl species.
  74. Psaras, Dimitrios; Gao, Yuan; Haneline, Mason; Lupo, Joseph; Landi, Carol, Removal of arsenic from aqueous streams with cerium (IV) oxide compositions.
  75. Glenn, W. Benjamin; Verplancken, Donald J., Simultaneous cyclical deposition in different processing regions.
  76. Haukka, Suvi P.; Tang, Fu; Givens, Michael E.; Maes, Jan Willem; Xie, Qi, Sulfur-containing thin films.
  77. Haukka, Suvi P.; Tang, Fu; Givens, Michael E.; Maes, Jan Willem; Xie, Qi, Sulfur-containing thin films.
  78. Haukka, Suvi P.; Tang, Fu; Givens, Michael; Maes, Jan Willem; Xie, Qi, Sulfur-containing thin films.
  79. Xi, Ming; Yang, Michael; Zhang, Hui, System and method for forming an integrated barrier layer.
  80. Ahn, Kie Y.; Forbes, Leonard, Titanium-doped indium oxide films.
  81. Ahn, Kie Y.; Forbes, Leonard, Titanium-doped indium oxide films.
  82. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Tungsten nitride atomic layer deposition processes.
  83. Wang,Shulin; Kroemer,Ulrich; Luo,Lee; Chen,Aihua; Li,Ming, Tungsten nitride atomic layer deposition processes.
  84. Lu, Siqing; Chang, Yu; Sun, Dongxi; Dang, Vinh; Yang, Michael X.; Chang, Anzhong; Nguyen, Anh N.; Xi, Ming, Valve control system for atomic layer deposition chamber.
  85. Lu,Siqing; Chang,Yu; Sun,Dongxi; Dang,Vinh; Yang,Michael X.; Chang,Anzhong (Andrew); Nguyen,Anh N.; Xi,Ming, Valve control system for atomic layer deposition chamber.
  86. Lee, Sang-Hyeob; Gelatos, Avgerinos V.; Wu, Kai; Khandelwal, Amit; Marshall, Ross; Renuart, Emily; Lai, Wing-Cheong Gilbert; Lin, Jing, Vapor deposition of tungsten materials.
  87. Witham, Richard Donald; McNew, Edward Bayer; Burba, III, John Leslie, Water purification device for arsenic removal.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로