초록 ▼

An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1.times.10.sup.6 /cm.sup.2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced ga

An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1.times.10.sup.6 /cm.sup.2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of processing a silicon substrate, comprising:placing the substrate into a vacuum chamber;evacuating the vacuum chamber to a first pressure;introducing a fluid other than molecular oxygen into the vacuum chamber; andimplanting ions into the substrate to form a

[ What is claimed is:] [1.]1. A method of processing a silicon substrate, comprising:placing the substrate into a vacuum chamber;evacuating the vacuum chamber to a first pressure;introducing a fluid other than molecular oxygen into the vacuum chamber; andimplanting ions into the substrate to form a buried oxide layer under a top silicon layer, wherein the fluid inhibits formations of threading dislocations in the top silicon layer for reducing a defect density of the processed substrate.