초록 ▼

A semiconductor fuse structure having a conductive fuse material abutting a first and second conductive line is provided. The fuse of the present invention does not substantially damage the surrounding semiconductor material therefore it can be used with a wide variety of materials including porous,

A semiconductor fuse structure having a conductive fuse material abutting a first and second conductive line is provided. The fuse of the present invention does not substantially damage the surrounding semiconductor material therefore it can be used with a wide variety of materials including porous, mechanically fragile, low dielectric constant materials and high conductive metals like Cu. Methods of fabricating such a semiconductor fuse structure are also provided herein.

대표청구항 ▼

[ Having thus described our invention in detail, what we claim as new and desire to secure by the Letters Patent is:] [1.]1. A semiconductor fuse structure comprising:a semiconductor structure having at least one wiring level formed on a semiconductor substrate;a first dielectric layer formed on a s

[ Having thus described our invention in detail, what we claim as new and desire to secure by the Letters Patent is:] [1.]1. A semiconductor fuse structure comprising:a semiconductor structure having at least one wiring level formed on a semiconductor substrate;a first dielectric layer formed on a surface of said semiconductor structure;a first and second conductive line formed in said first dielectric layer, each conductive line having an end, wherein said ends are in proximity to each other;a second dielectric layer formed on said first dielectric layer covering said first and second conductive lines, said second dielectric layer having a contact hole therein exposing said first and second conductive lines; anda conductive fuse material formed in said contact hole so as to provide an electrical connection between said first and second conductive lines.