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Cathode contact ring for electrochemical deposition

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-017/00
출원번호 US-0201486 (1998-11-30)
발명자 / 주소
  • Stevens Joe
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Thomason, Moser & Patterson LLP
인용정보 피인용 횟수 : 192  인용 특허 : 13

초록

The present invention provides a cathode contact ring for use in an electroplating cell. The contact ring comprises an insulative body having a substrate seating surface and one or more conducting members disposed in the insulative body. The conducting members provide discrete conducting pathways an

대표청구항

[ What is claimed is:] [21.]21. An apparatus for electroplating a substrate, comprising:(a) an electroplating cell body;(b) a lid disposed at an upper end of the body;(c) an anode disposed at a lower end of the body;(d) a cathode contact ring at least partially disposed within the cell body adjacent

이 특허에 인용된 특허 (13)

  1. Woodruff Daniel J. ; Hanson Kyle M., Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member.
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  9. Ishida Hirofumi (Kanagawa JPX), Plating device for wafer.
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  12. Thompson Raymon F. (Kalispell MT) Owczarz Aleksander (Kalispell MT), Single wafer processor with a frame.
  13. Powell Walter W. (Peculiar MO) Seifert Gary A. (Lee\s Summit MO), Vacuum-type article holder and methods of supportively retaining articles.

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  154. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
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  156. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
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  172. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.
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  189. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  190. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
  191. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
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