초록 ▼

A method of manufacturing a semiconductor device comprising the steps of forming a dummy film and a dummy gate pattern at a predetermined gate-forming region on a semiconductor substrate, forming a first side wall insulating film on a side wall of the dummy gate pattern, forming an interlayer insula

A method of manufacturing a semiconductor device comprising the steps of forming a dummy film and a dummy gate pattern at a predetermined gate-forming region on a semiconductor substrate, forming a first side wall insulating film on a side wall of the dummy gate pattern, forming an interlayer insulating film on a position of the semiconductor substrate around the dummy gate pattern bearing the first side wall insulating film, forming a groove by removing the dummy gate pattern, removing a portion of dummy film exposed through the groove while leaving a portion of the first side wall insulating film as well as a portion of the dummy film disposed below the portion of the first side wall insulating film, forming a gate insulating film at least on a bottom surface of the groove, and forming a gate electrode on the gate insulating film formed in the groove.

대표청구항 ▼

[ What is claimed is:] [9.]9. A method of manufacturing a semiconductor device comprising the steps of:forming a dummy film and a dummy gate pattern at a gate-forming region on a semiconductor substrate;modifying at least a lower edge portion of said dummy gate pattern;forming an interlayer insulati

[ What is claimed is:] [9.]9. A method of manufacturing a semiconductor device comprising the steps of:forming a dummy film and a dummy gate pattern at a gate-forming region on a semiconductor substrate;modifying at least a lower edge portion of said dummy gate pattern;forming an interlayer insulating film on a portion of said semiconductor substrate around the dummy gate pattern;forming a groove by removing said dummy gate pattern while leaving said modified portion of said dummy gate pattern;removing a portion of the dummy film exposed through said groove;forming a gate insulating film at least on a bottom surface of said groove; andforming a gate electrode on said gate insulating film formed in said groove.