초록 ▼

An improved fin device used as the body of a field effect transistor ("FET") and an improved process of making the fin device. The fin device allows for the fabrication of very small dimensioned metal-oxide semiconductor ("MOS") FETs in the size range of micrometers to nanometers, while avoiding the

An improved fin device used as the body of a field effect transistor ("FET") and an improved process of making the fin device. The fin device allows for the fabrication of very small dimensioned metal-oxide semiconductor ("MOS") FETs in the size range of micrometers to nanometers, while avoiding the typical short channel effects often associated with MOSFETs of these dimensions. Accordingly, higher density MOSFETs may be fabricated such that more devices may be placed on a single semiconductor wafer. The process of making the fin device results in an improved fully planarized device.

대표청구항 ▼

[ What is claimed is:] [1.]1. A planarized fin device, comprising:a substrate;a vertical fin formed on a portion of the substrate, leaving a remaining portion of the substrate exposed;an oxide layer covering the fin and the exposed substrate;a source and drain formed on top of the oxide layer;a poly

[ What is claimed is:] [1.]1. A planarized fin device, comprising:a substrate;a vertical fin formed on a portion of the substrate, leaving a remaining portion of the substrate exposed;an oxide layer covering the fin and the exposed substrate;a source and drain formed on top of the oxide layer;a polysilicon gate separating the source and drain;workfunction dopant implants;a silicide layer covering the polysilicon gate; anda top oxide layer forming a planarized top surface of the fin device.