초록 ▼

A method of minimizing particle or residue accumulation within an exhaust line of a substrate processing chamber having a downstream plasma apparatus connected to the exhaust line. One embodiment of the method turns ON the downstream plasma apparatus during a substrate deposition step and a chamber

A method of minimizing particle or residue accumulation within an exhaust line of a substrate processing chamber having a downstream plasma apparatus connected to the exhaust line. One embodiment of the method turns ON the downstream plasma apparatus during a substrate deposition step and a chamber clean operation, and switches the downstream plasma apparatus OFF at other times including the time during which purge gases are flowed into the chamber and various chamber set up or conditioning steps are performed. The method includes depositing a film over a substrate disposed in the substrate processing chamber by (i) flowing a deposition gas into the substrate processing chamber, exhausting at least some of the deposition gas from the processing chamber through an exhaust line and into the downstream plasma apparatus, and forming a plasma within the downstream plasma apparatus; and then (ii) stopping the flow of the deposition gas, turning the plasma OFF, and flowing a purge gas into the substrate processing chamber. After one or more film deposition steps, the chamber is cleaned to remove film deposition from the interior surfaces of the chamber by (i) flowing an etchant into the substrate processing chamber, exhausting the etchant from the substrate processing chamber through an exhaust line and into the downstream plasma apparatus, and forming a plasma within the downstream plasma apparatus; and then (ii) stopping the flow of the etchant, turning the plasma OFF, and flowing a purge gas into the substrate processing chamber.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of operating a substrate processing chamber, said method comprising:flowing a deposition gas comprising an organosilane into said chamber during a film deposition step to deposit a layer over said substrate; andthereafter, flowing an etchant into said chamber d

[ What is claimed is:] [1.]1. A method of operating a substrate processing chamber, said method comprising:flowing a deposition gas comprising an organosilane into said chamber during a film deposition step to deposit a layer over said substrate; andthereafter, flowing an etchant into said chamber during a chamber clean step to remove material deposited on interior walls of said chamber;said method also comprising:flowing at least one of an oxygen source and oxygen-containing byproducts into a downstream plasma apparatus fluidly coupled to receive an effluent stream from said chamber and concurrently forming a plasma within said apparatus; andflowing at least one of a halogen source and halogen-containing byproducts into said downstream plasma apparatus and concurrently forming a plasma within said apparatus.