초록 ▼

A semiconductor device with a package size close to its chip size is, apart from a stress absorbing layer, such as to effectively absorb thermal stresses. A semiconductor device (150) has a semiconductor chip provided with electrodes (158), a resin layer (152) forming a stress relieving layer provid

A semiconductor device with a package size close to its chip size is, apart from a stress absorbing layer, such as to effectively absorb thermal stresses. A semiconductor device (150) has a semiconductor chip provided with electrodes (158), a resin layer (152) forming a stress relieving layer provided on the semiconductor chip, wiring (154) formed from the electrodes (158) to over the resin layer (152), and solder balls (157) formed on the wiring (154) over the resin layer (152); the resin layer (152) is formed so as to have a depression (152a) in the surface, and the wiring (154) is formed so as to pass over the depression (152a).

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of making a semiconductor device comprising:a step of providing a member on which are formed electrodes;a step of providing a first stress relieving layer on the member, the first stress relieving layer having contact holes formed therein and depressions formed

[ What is claimed is:] [1.]1. A method of making a semiconductor device comprising:a step of providing a member on which are formed electrodes;a step of providing a first stress relieving layer on the member, the first stress relieving layer having contact holes formed therein and depressions formed thereon, at least a part of the electrodes positioned inside thea step of forming a first conducting portion over the first stress relieving layer from the electrodes, the first conducting portion passing over the depressions, the first conducting portion bent over the depressions.