초록 ▼

A structure and process for a triple damascene interconnection device. The device is formed within a terraced trench formed using damascene techniques within a single, relatively thick dielectric film. The interconnection device formed within the terraced structure includes a plurality of films and

A structure and process for a triple damascene interconnection device. The device is formed within a terraced trench formed using damascene techniques within a single, relatively thick dielectric film. The interconnection device formed within the terraced structure includes a plurality of films and is a vertically coherent, redundant structure.

대표청구항 ▼

[ What is claimed:] [1.]1. A process for forming a connection device, comprising the steps of:(a) forming a contact layer over a substrate, said contact layer having a contact surface;(b) forming a dielectric film over said contact surface, said dielectric film having a top, a bottom, and an upper s

[ What is claimed:] [1.]1. A process for forming a connection device, comprising the steps of:(a) forming a contact layer over a substrate, said contact layer having a contact surface;(b) forming a dielectric film over said contact surface, said dielectric film having a top, a bottom, and an upper surface;(c) forming a terraced trench opening within said dielectric film, said terraced trench opening having a trench bottom surface and at least three adjoining vertical sections, each vertical section having at least one generally vertical side wall and being connected to an adjoining vertical section by a substantially horizontal lip, the vertical sections becoming progressively wider from bottom to top of the dielectric film;(d) forming a barrier film at least within said terraced trench opening;(e) depositing a tungsten liner film at least over said barrier film;(f) forming a spacer film over said tungsten liner film, said spacer film comprising one of titanium nitride and hexagonal tantalum nitride;(g) forming a copper seed layer over said spacer film;(h) filling said terraced trench opening with a conductive film comprising electrodepositing; and(i) polishing said device thereby forming a polished surface over said terraced trench opening, said polished surface being substantially parallel to said upper surface of said dielectric film.