초록 ▼

A method of forming a shallow trench isolation structure is described. A mask layer and a photoresist layer with an opening are formed on a substrate in sequence. The photoresist layer serves as an etching mask, and then a portion of the mask layer and a portion of the substrate are etched to form a

A method of forming a shallow trench isolation structure is described. A mask layer and a photoresist layer with an opening are formed on a substrate in sequence. The photoresist layer serves as an etching mask, and then a portion of the mask layer and a portion of the substrate are etched to form a trench in the substrate. A portion of the photoresist layer is removed, and the opening is in-situ widened. Then, a portion of the mask layer exposed by the widened opening is removed. In addition, a top corner of the trench is rounded after removing the portion of the mask layer. Finally, the trench is filled with an insulation material to form a shallow trench isolation structure.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of forming a shallow trench isolation structure, comprising the steps of:providing a substrate;forming a pad oxide layer on the substrate;forming a silicon nitride layer on the pad oxide layer;forming a photoresist layer with an opening on the silicon nitride l

[ What is claimed is:] [1.]1. A method of forming a shallow trench isolation structure, comprising the steps of:providing a substrate;forming a pad oxide layer on the substrate;forming a silicon nitride layer on the pad oxide layer;forming a photoresist layer with an opening on the silicon nitride layer;with the photoresist layer serving as a mask, etching the silicon nitride layer, the pad oxide layer and the substrate in sequence, so as to form a trench in the substrate;performing an isotropic etching process to remove a portion of the photoresist layer, wherein the opening is widened and a portion of the silicon nitride layer is exposed by the widened opening;removing the exposed portion of the silicon nitride layer;removing the photoresist layer;filling the trench with a silicon dioxide layer to form a shallow trench isolation structure;removing the silicon nitride layer; andremoving the pad oxide layer.