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A method of fabricating a contact for electrical connection to a conductive element of an integrated circuit includes partially forming a via in a layer over the conductive element. The via can be defined by an opening in a photoresist pattern. The photoresist pattern is removed prior to exposure of

A method of fabricating a contact for electrical connection to a conductive element of an integrated circuit includes partially forming a via in a layer over the conductive element. The via can be defined by an opening in a photoresist pattern. The photoresist pattern is removed prior to exposure of the conductive element at a bottom of the via, and a blanket etch is subsequently performed to expose the conductive element at the bottom of the via. Removing the photoresist pattern can include stripping the photoresist pattern in an ambient comprising oxygen. The via then can be substantially filled with a conductive material. The techniques are particularly advantageous when the previously-formed conductive element is easily oxidizable, for example, where the conductive element includes copper. The techniques can obviate the need to employ less desirable organic solvents to remove the photoresist masks and can improve the quality of the electrical contact.

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[ What is claimed is:] [1.]1. A method of fabricating a contact for electrical connection to a conductive element of an integrated circuit, the method comprising:partially forming a via in a layer over the conductive element, wherein the via is defined by an opening in a photoresist pattern;removing

[ What is claimed is:] [1.]1. A method of fabricating a contact for electrical connection to a conductive element of an integrated circuit, the method comprising:partially forming a via in a layer over the conductive element, wherein the via is defined by an opening in a photoresist pattern;removing the photoresist pattern prior to exposure of the conductive element at a bottom of the via;subsequently performing a blanket etch to expose the conductive element at the bottom of the via, said blanket etch forming a first set of sloping upper side edges and a second set of sloping upper side edges, said first set of sloping upper side edges being connected to a first set of substantially vertical sidewalls and forming an exterior angle greater than ninety degrees and less than one hundred eighty degrees, said second set of sloping upper side edges being connected to a second set of substantially vertical sidewalls and forming an exterior angle greater than ninety degrees and less than one hundred eighty degrees, the first set of sloping upper edges connected to the second set of substantially vertical sidewalls; andfilling the via with a conductive material.