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Control of size and heat affected zone for fine pitch wire bonding 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B23K-031/02
  • B23K-001/06
출원번호 US-0514527 (2000-02-28)
발명자 / 주소
  • Murdeshwar Nikhil M.
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    McGuireWoods, LLPFraley
인용정보 피인용 횟수 : 17  인용 특허 : 21

초록

The amount of a terminal portion of bonding wire which is melted to form a free air ball for ball bonding and the temperature rise in the bonding wire adjacent the free air ball is limited by quenching of the wire and free air ball with a flow of a gas which also effectively removes heat applied to

대표청구항

[ Having thus described my invention, what I claim as new and desire to secure by Letters Patent is as follows:] [1.]1. A method of performing ball wire bonding comprising the steps of:providing a first substrate having at least one bonding pad thereon;providing a bonding wire having a terminal port

이 특허에 인용된 특허 (21)

  1. Miyazaki Naoki (Fukuoka JPX), Apparatus and method for forming wire bonding ball.
  2. Gillotti Gary Steven ; Kulicke ; Jr. Frederick William, Apparatus and method for making predetermined fine wire ball sizes.
  3. Kobayashi Mituo (Aioi JPX) Usuda Osamu (Tatsuno JPX) Sano Yoshihiko (Hyogo JPX) Atsumi Koichiro (Yokohama JPX), Apparatus and method for manufacturing semiconductor device.
  4. Peterson James R. (Garland TX) Majors Edward M. (Plano TX), Apparatus and method of forming aluminum balls for ball bonding.
  5. Sakurai Keizou (Tokyo JPX), Apparatus for forming bonding balls on bonding wires.
  6. Edson ; Donald A. ; Johnson ; Keith I. ; Scott ; Michael H., Bonding method and apparatus.
  7. Murdeshwar Nikhil M., Control of size and heat affected zone for fine pitch wire bonding.
  8. Quick Roderick L. (DeSoto TX) Orcutt John W. (Richardson TX), Method and apparatus for fine pitch wire bonding using a shaved capillary.
  9. Harrah Shane (Palo Alto CA) Phy William (Los Altos Hills CA), Method and apparatus for forming ball bonds.
  10. Takahashi Hiroyuki (Kyoto JPX) Fujino Shinichi (Kyoto JPX) Sakamoto Kazuhiro (Kyoto JPX) Hirano Tomoyasu (Yanagawa JPX), Method and apparatus for performing wire bonding by using solder wire.
  11. Hirota Jitsuho (Hyogo JPX) Machida Kazumichi (Hyogo JPX) Watanabe Noriko (Hyogo JPX), Method of ball forming for wire bonding.
  12. Hasegawa Miki (Kyoto JPX) Kuriyama Chojiro (Kyoto JPX), Method of forming a ball end for a solder wire.
  13. Hasegawa Miki (Kyoto JPX) Kuriyama Chojiro (Kyoto JPX), Method of forming a ball end for a solder wire.
  14. Kurtz John A. (Saco ME) Cousens Donald E. (Saco ME) Dufour Mark D. (Portland ME), Pulse-width control of bonding ball formation.
  15. Okikawa Susumu (Ohme JPX) Mikino Hiroshi (Tachikawa JPX) Suzuki Hiromichi (Tokyo JPX) Kitamura Wahei (Kodaira JPX) Sakamoto Daiji (Yonago JPX), Semiconductor device and method of manufacturing the same.
  16. Nakajima Makoto (Takasaki JPX) Ohashi Yoshio (Tamamura JPX) Chuma Toshio (Takasaki JPX) Hatori Kazuo (Tamamura JPX) Araki Isao (Tamamura JPX) Koizumi Masahiro (Hitachi JPX) Onuki Jin (Hitachi JPX) Su, Semiconductor device and production process thereof, as well as wire bonding device used therefor.
  17. Bertin Robert (San Jose CA) Miller Michael B. (DeSota TX) Moon Burl M. (Richardson TX) Post Robert C. (Dallas TX), Silicon carbide capillaries.
  18. Ramsey Thomas H. (Garland TX) Alfaro Rafael C. (The Colony TX), Ultrasonic bonding process beyond 125 kHz.
  19. Ohashi Yuji (Tokyo JPX) Terakado Yoshimitsu (Tokyo JPX) Hayashi Hijiri (Tokyo JPX), Wire bonding apparatus.
  20. Morisako Isamu (Fukuoka JPX), Wire bonding apparatus and method.
  21. Terakado Yoshimitsu (Tokyo JPX) Sugiura Kazuo (Tokyo JPX), Wire bonding method and apparatus.

이 특허를 인용한 특허 (17)

  1. Lin, Mou-Shiung; Lee, Jin-Yuan, Chip packages having dual DMOS devices with power management integrated circuits.
  2. Gillotti, Gary S.; Szczesniak, Stanley; Van Emmerik, Peter J., Gas delivery system for reducing oxidation in wire bonding operations.
  3. Gillotti, Gary S.; Szczesniak, Stanley; Van Emmerik, Peter J., Gas delivery system for reducing oxidation in wire bonding operations.
  4. Lin, Mou-Shiung, High performance IC chip having discrete decoupling capacitors attached to its IC surface.
  5. Tilly,Lars, Semiconductive chip having a bond pad located on an active device.
  6. Skogsmo, Jan Birger; Reatherford, Larry Van; Popoola, Oludele Olusegun; Jahn, Ray; Kiridena, Vijitha Senaka, Sonotrode for ultrasonic welding apparatus.
  7. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  8. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  9. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  10. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  11. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  12. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  13. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  14. Liu, Chih-I, Ventilating apparatus.
  15. Liu, Chih-I, Ventilating apparatus.
  16. Lin, Mou-Shiung; Wei, Gu-Yeon, Voltage regulator integrated with semiconductor chip.
  17. Pham, Ken, Wire bonding apparatus with a textured capillary surface enabling high-speed wedge bonding of wire bonds.
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