초록 ▼

A method to deposit a composite metal to form a continuous, smooth film in high aspect ratio features such as vias, contacts and/or trenches on a wafer in a single step. Metal atoms are sputtered from a composite target containing a first metal and a second metal in a single reaction chamber. A phys

A method to deposit a composite metal to form a continuous, smooth film in high aspect ratio features such as vias, contacts and/or trenches on a wafer in a single step. Metal atoms are sputtered from a composite target containing a first metal and a second metal in a single reaction chamber. A physical vapor deposition processes such as ionized physical vapor deposition (IPVD) is preferred. In one embodiment, the first metal is titanium and the second metal is aluminum. The method eliminates a high temperature anneal and results in lower resistivity, a better wetting layer for subsequent deposition and improved control over thickness of the metal layer.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of depositing a film in a feature, comprising depositing into said feature in a single reaction chamber by a physical vapor deposition process a first layer comprising a first metal and a second metal from a composite target of said first metal and said second

[ What is claimed is:] [1.]1. A method of depositing a film in a feature, comprising depositing into said feature in a single reaction chamber by a physical vapor deposition process a first layer comprising a first metal and a second metal from a composite target of said first metal and said second metal, wherein a stoichiometry of said first metal and said second metal reaction is varied, and subsequently filling said feature with a conductive metal.