초록 ▼

An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceilin

An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low. In another aspect of the invention, the RF signal applicator has an annular distribution characterized by an effective mean radius, the plasma having a radial ion density distribution with respect to an axis of symmetry of the ceiling which is center-high for a lesser mean radius of the signal applicator and center-low for a greater mean radius of the signal applicator, the mean radius of the signal applicator being intermediate the greater and lesser mean radii such that the radial ion density distribution is neither center-high nor center-low.

대표청구항 ▼

[ What is claimed is:] [1.]1. An RF plasma reactor, comprising:a reactor chamber including a ceiling;a gas inlet for supplying a process gas into said chamber;an overhead RF signal applicator near said ceiling for applying an RF signal into said chamber through said ceiling to maintain a plasma of s

[ What is claimed is:] [1.]1. An RF plasma reactor, comprising:a reactor chamber including a ceiling;a gas inlet for supplying a process gas into said chamber;an overhead RF signal applicator near said ceiling for applying an RF signal into said chamber through said ceiling to maintain a plasma of said process gas in said chamber, said overhead RF signal applicator having a mean radius;a wafer pedestal in said chamber for supporting a semiconductor wafer to be processed in generally facing relationship relative to said ceiling;wherein said plasma has a radial ion density distribution near the plane of said pedestal which is a center-high radial distribution for a greater height of said ceiling above said pedestal and is a center-low distribution for a lesser height of said ceiling above said pedestal, said height of said ceiling being intermediate said greater and lesser heights such that said radial ion density distribution is intermediate said center-high and center-low radial distributions, wherein the height of said ceiling above said wafer pedestal and said means radius of said RF signal applicator define a ratio therebetween in the range of approximately 0.8 to 1.5.