초록 ▼

The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the lon

The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the longitudinal direction from the seed window, followed by lateral growth of the same material to form an epitaxial film and a structure which provides a defect free surface for further epitaxial layers.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of preparing a semiconductor wafer, comprising the steps of:growing a buffer layer on a substrate;growing a barrier layer on said buffer layer;etching a pattern of openings in said barrier layer;growing a III-V material in the openings in a longitudinal directi

[ What is claimed is:] [1.]1. A method of preparing a semiconductor wafer, comprising the steps of:growing a buffer layer on a substrate;growing a barrier layer on said buffer layer;etching a pattern of openings in said barrier layer;growing a III-V material in the openings in a longitudinal direction from said openings and then in a lateral direction from said openings to form a continuous layer; andgrowing a semiconductor device on said continuous layer.