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Ion implantation with charge neutralization 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01S-001/00
  • H01S-003/00
  • H05H-003/02
  • H01J-027/00
  • G21K-005/10
출원번호 US-0083707 (1998-05-22)
발명자 / 주소
  • Farley Marvin
  • Dudnikov Vadim G.
  • Nasser-Ghodsi Mehran
출원인 / 주소
  • Ebara Corporation, JPX
인용정보 피인용 횟수 : 45  인용 특허 : 92

초록

An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generat

대표청구항

[ What is claimed is:] [1.]1. An ion implanter for implanting ions in a workpiece, comprisingapparatus for generating an ion beam and directing it toward a surface of a work piece, anda plasma generator for generating plasma to neutralize the ion beam and the work piece surface, the plasma generator

이 특허에 인용된 특허 (92)

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  77. O\Connor John P. (Andover MA), Production of high beam currents at low energies for use in ion implantation systems.
  78. Purser Kenneth H. (Lexington MA), Rutherford backscattering surface analyzer with 180-degree deflecting and focusing permanent magnet.
  79. Koji Masashi (Shinjuku JPX), Sanitary device.
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  81. O\Connor John P. (Andover MA) Smith John W. (Newburyport MA), Scan technique to reduce transient wafer temperatures during ion implantation.
  82. Sugiyama Toshiaki (Tokyo JPX), Scanning control system involved in an ion-implantation apparatus.
  83. Le Jeune Claude (Gif Sur Yvette FRX), Source of ions of the triode type with a single high frequency exitation ionization chamber and magnetic confinement of.
  84. Armour David G. (Salford GBX) England Johnathan G. (Horsham GBX) Bryan Neil (Hull GBX) Van der Berg Jakob A. (Didsbury GBX), Spectrum analyzer in an ion implanter.
  85. Glavish Hilton F. (Incline Village NV), System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic.
  86. Renau Anthony (Horsham GB2) Moffatt Stephen (Byfleet GB2) Plumb Frederick (Horsham GB2), System and methods for wafer charge reduction for ion implantation.
  87. Joyner Keith A. (Richardson TX) Hollingsworth James B. (Woodland Park CO), Systems and methods for controlling the temperature and uniformity of a wafer during a SIMOX implantation process.
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  89. Mayer Edward F. (Cromwell CT), Thermally activated electrostatic charging method and system.
  90. Campana Joseph E. (Alexandria VA), Ton beam neutralizer.
  91. Rose Peter H. (Rockport MA) Farley Marvin (Ipswich MA) Grodzins Lee (Lexington MA), Treating work pieces with electro-magnetically scanned ion beams.
  92. Menet Jacques (Saint-Egreve FRX) de Gabrielli Olivier (Grenoble FRX), Vapor and ion source.

이 특허를 인용한 특허 (45)

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  7. Fujita,Hideki, Deflecting electromagnet and ion beam irradiating apparatus.
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