[특허]Solid-state image sensor having a substrate with an impurity concentration gradient

Solid-state image sensor having a substrate with an impurity concentration gradient 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-027/146 H01L-031/068
출원번호	US-0110074 (1998-07-02)
우선권정보	JP0179923 (1997-07-04)
발명자 / 주소	Nozaki Hidetoshi,JPX Yamashita Hirofumi Ihara Hisanori,JPX Yamaguchi Tetsuya,JPX Inoue Ikuko,JPX
출원인 / 주소	Kabushiki Kaisha Toshiba, JPX
대리인 / 주소	Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보	피인용 횟수 : 17 인용 특허 : 7

초록 ▼

A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

대표청구항 ▼

[ What is claimed is:] [1.]1. A solid-state image sensor comprising:a semiconductor substrate;a photoelectric conversion portion formed above said semiconductor substrate; andnoise cancelers each formed adjacent to said photoelectric conversion portion, configured to remove noise of a signal read from said photoelectric conversion portion, whereinsaid semiconductor substrate has a conductivity type such that carriers of said signal are minority charge carriers, and has a first region and a second region,a concentration of impurities of said second region is lower than that of said first region,said impurity concentration in said second region is gradually lower toward a surface of said semiconductor substrate, andsaid impurity concentration in said first region is 1.times.10.sup.18 cm.sup.-3 or higher.

이 특허에 인용된 특허 (7)

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Kamins Theodore I. (Montain View CA) Fong Godfrey T. (Belmont CA), Photosensing arrays with improved spatial resolution.
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Harada Kouichi,JPX, Solid-state imaging device of a vertical overflow drain system.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Solid-state image sensor having a substrate with an impurity concentration gradient 원문보기