초록 ▼

A gate drive circuit of a voltage drive switching element, which is characterized by control of di/dt and dv/dt when an IGBT is switched by controlling increases in the switching time and loss of the IGBT, includes a drive means for amplifying a signal for controlling the switching operation of a vo

A gate drive circuit of a voltage drive switching element, which is characterized by control of di/dt and dv/dt when an IGBT is switched by controlling increases in the switching time and loss of the IGBT, includes a drive means for amplifying a signal for controlling the switching operation of a voltage drive switching device including the IGBT, a means for detecting the gate voltage of the IGBT, a voltage decrease (increase) means for slowly decreasing (increasing) the output voltage when the drive means is turned on (off) in the course of time, and a voltage increase (decrease) means for slowly increasing (decreasing) the output voltage. By switching from the voltage decrease (increase) means to the voltage increase (decrease) means according to the detected value of the gate voltage of the IGBT, di/dt and dv/dt are controlled when the IGBT is turned on (off).

대표청구항 ▼

[ What is claimed is:] [1.]1. A gate drive circuit of a voltage drive switching element comprising drive means for outputting an output power for controlling a gate voltage of said voltage drive switching element, a detector for detecting said gate voltage of said voltage drive switching element and

[ What is claimed is:] [1.]1. A gate drive circuit of a voltage drive switching element comprising drive means for outputting an output power for controlling a gate voltage of said voltage drive switching element, a detector for detecting said gate voltage of said voltage drive switching element and providing an output indicative of said gate voltage, power decrease means, responsive to said output of said detector, for decreasing said output power in the course of a power decrease operation time when switching said voltage drive switching element, and power increase means, responsive to said output of said detector, for increasing said output power in the course of a power increase operation time when switching said voltage drive element, wherein the power decrease operation time of said power decrease means is larger than the power increase operation time of said power increase means.